Continuous wave laser assisted chemical material removal from Mo, W, and Si at faint red hot temperatures (700–800 °C)

Koren, Gad
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p1012
Academic Journal
cw CO2 and argon ion laser assisted chemical etching of Mo and W in air and Mo, W, and Si in a 7% F2 mixture in He is reported. At room temperature, these materials are hardly etched in air or the F2 mixture. At faint red hot temperatures (700–800 °C), however, they react strongly with the fluorine to produce volatile MoF6, WF6, and SiF4 which allow the etching process to continue. Using 50 W/cm2 of the cw CO2 laser radiation on a 275-μm-thick Si wafer in 30 Torr of the F2 mixture yielded an etch rate of ∼1 μm/s (on both sides) and submicron surface smoothness. Using 4 W of the 4880 Å Ar ion laser beam focused tightly on a 30-μm-thick Mo film in air, perforated the film at a rate of 2 μm/s by producing the volatile MoO3 at the elevated temperature.


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