TITLE

Influence of stress on light-induced effects in amorphous silicon alloys

AUTHOR(S)
Guha, S.; den Boer, W.; Agarwal, S. C.; Hack, M.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p947
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have studied the effect of stress on light-induced changes in photoconductivity and solar cell performance of amorphous silicon alloys. We find no correlation between degradation and stress in the material.
ACCESSION #
9818381

 

Related Articles

  • Physics of amorphous silicon alloy p-i-n solar cells. Hack, M.; Shur, M. // Journal of Applied Physics;7/15/1985, Vol. 58 Issue 2, p997 

    Presents a comprehensive computer simulation of amorphous silicon alloy p-i-n solar cells. Significance of amorphous silicon alloy p-i-n cells; Photoconductivity of amorphous silicon alloys; Physical mechanisms of homojunction amorphous silicon p-i-n solar cells.

  • Erratum: "Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys".  // Applied Physics Letters;4/30/2015, Vol. 106 Issue 17, p1 

    A correction to the article "Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys" that was published in a 2013 issue is presented.

  • Liquation Cracking in Full Penetration Al-Si Welds. Cao, G.; Kou, S. // Welding Journal;Apr2005, Vol. 84 Issue 4, p63s 

    Investigates liquation cracking in the partially melted zone (PMZ) in welds of Aluminum (Al)-Silicon alloys. Evaluation of crack susceptibility by the circular-patch test; Conditions under which liquation cracking can occur in weld metals; Detection of significant cracking in filler metals 1100...

  • Analysis of creep behavior of SiC/Al metal matrix composites based on a generalized shear-lag model. Ryu, Ho J.; Chung, Kyung H.; Cha, Seung I.; Hong, Soon H. // Journal of Materials Research;Dec2004, Vol. 19 Issue 12, p3633 

    The creep behaviors of 20 vol% SiCw/2124Al, extruded with different ratios, and SiCp/2124Al, reinforced with 10-30 vol% SiC particles, were investigated to clarify the effects of aspect ratio, alignment, and volume fraction of reinforcement on creep deformation. The effective stresses on the...

  • Role of mechanical stress in the light-induced degradation of hydrogenated amorphous silicon. Stutzmann, Martin // Applied Physics Letters;7/1/1985, Vol. 47 Issue 1, p21 

    The correlation between the high intrinsic mechanical stresses in plasma-deposited hydrogenated amorphous silicon and the magnitude of the light-induced degradation in this material (Staebler–Wronski effect) has been studied for films with different thicknesses and for various substrate...

  • Carrier collection losses in amorphous silicon and amorphous silicon-germanium alloy solar cells. Banerjee, A.; Xu, X. // Applied Physics Letters;11/13/1995, Vol. 67 Issue 20, p2975 

    Investigates the carrier collection losses in amorphous silicon and amorphous silicon-germanium alloy solar cells by measuring the biased quantum efficiency. Identification of losses near the p/i junction and the bulk of the i layer; Dependence of the extent of the losses on the quality of i...

  • Band edge discontinuities between microcrystalline and amorphous hydrogenated silicon alloys and.... Xu, X.; Yang, J. // Applied Physics Letters;10/16/1995, Vol. 67 Issue 16, p2323 

    Investigates the band edge discontinuities between microcrystalline and amorphous hydrogenated silicon alloys. Calculation of the band gap of microcrystalline hydrogenated silicon; Derivation of the discontinuities at the conduction and the valence band edges; Examination of the effect of the...

  • Double-junction amorphous silicon-based solar cells with 11% stable efficiency. Yang, J.; Guha, S. // Applied Physics Letters;12/14/1992, Vol. 61 Issue 24, p2917 

    Examines the performance of dual-band gap double-junction amorphous silicon alloy-based solar cells with stable efficiency. Analysis on different degrees of current mismatch of component cells under annealed and light-soaked conditions; Achievement of a stabilized active-area efficiency;...

  • Infrared birefringence imaging of residual stress and bulk defects in multicrystalline silicon. Ganapati, Vidya; Schoenfelder, Stephan; Castellanos, Sergio; Oener, Sebastian; Koepge, Ringo; Sampson, Aaron; Marcus, Matthew A.; Lai, Barry; Morhenn, Humphrey; Hahn, Giso; Bagdahn, Joerg; Buonassisi, Tonio // Journal of Applied Physics;Oct2010, Vol. 108 Issue 6, p063528 

    This manuscript concerns the application of infrared birefringence imaging (IBI) to quantify macroscopic and microscopic internal stresses in multicrystalline silicon (mc-Si) solar cell materials. We review progress to date, and advance four closely related topics. (1) We present a method to...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics