TITLE

Bias dependence of doping efficiency in hydrogenated amorphous silicon

AUTHOR(S)
Alvarez, F.
PUB. DATE
November 1985
SOURCE
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p960
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter is concerned with the doping efficiency of phosphorus and boron doped samples of hydrogenated amorphous silicon grown under different substrate bias conditions. Although in a capacitively coupled glow discharge system generally the powered electrode is negatively self-polarized, some control of the dc bias is obtained by changing the electrode areas and/or using an external bias. It has been found that the activation energy of doped samples depends on the polarity and magnitude of an external dc bias applied to the substrate support. This result was used to enhance the incorporation of residual boron in the intrinsic layer of p-i-n structures fabricated onto a indium-tin-oxide coated glass.
ACCESSION #
9818379

 

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