Fermi energy dependence of linewidth enhancement factor of GaAlAs buried heterostructure lasers

Arakawa, Y.; Yariv, A.
November 1985
Applied Physics Letters;11/1/1985, Vol. 47 Issue 9, p905
Academic Journal
The linewidth enhancement factor α is measured in a number of GaAlAs lasers with different internal losses. It is found that α decreases monotonically with the increase of the loss (Fermi energy level) in agreement with the theoretical prediction. On the basis of these results the design of cavity length and mirror reflection in order to reduce the spectral linewidth of the laser output is discussed.


Related Articles

  • Room-temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy. Chiu, T. H.; Tsang, W. T.; Ditzenberger, J. A.; van der Ziel, J. P. // Applied Physics Letters;10/27/1986, Vol. 49 Issue 17, p1051 

    In0.16Ga0.84As0.15Sb0.85/Al0.35Ga0.65Sb double heterostructure injection lasers have been grown by molecular beam epitaxy on (100) GaSb substrates. Room-temperature operation near 2.2 μm wavelength has been achieved under pulsed conditions. Low pulsed threshold current density of 4.2 kA/cm2...

  • A novel GaInAsP/InP distributed feedback laser. Liau, Z. L.; Flanders, D. C.; Walpole, J. N.; DeMeo, N. L. // Applied Physics Letters;2/1/1985, Vol. 46 Issue 3, p221 

    GaInAsP/InP distributed feedback lasers have been fabricated with a simple new design in which the grating is etched into the top of a mass-transported buried heterostructure. Single-frequency operation with sidemodes lower than - 32 dB and threshold currents as low as 16 mA have been achieved.

  • Field-effect induced electron channels in a Si/Si0.7Ge0.3 heterostructure. Holzmann, M.; Többen, D.; Abstreiter, G.; Schäffler, F. // Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3917 

    Examines the size effects in field-effect induced wires imposed upon a high-mobility Si/Si[sub0.6]Ge[sub0.3] heterostructure by magnetotransport. Data on the temperature-dependent magnetoresistance of the wires and reference sample; Expression for the separation between the equipotentials at...

  • Analysis of Fermi level pinning and surface state distribution in InAIAs heterostructures. Chou, W. Y.; Chang, G. S.; Hwang, W.C.; Hwang, J.S. // Journal of Applied Physics;4/1/1998, Vol. 83 Issue 7, p3690 

    Presents information on the analysis of Fermi level pinning and surface state distribution in InAIAs heterostructures. Details on the surface Fermi level; Information on the InAIAs/InGaAs heterostructure; Results from the experiment.

  • Room-temperature cw operation of InGaPAs/GaAlAs visible light double heterojunction lasers. Kaneiwa, Shinji; Takiguchi, Haruhisa; Hayakawa, Toshiro; Yamamoto, Saburo; Hayashi, Hiroshi; Yano, Seiki; Hijikata, Toshiki // Applied Physics Letters;3/1/1985, Vol. 46 Issue 5, p455 

    InGaPAs/GaAlAs double heterojunction (DH) lasers operated continuously at room temperature in the spectral range of 720–730 nm. The DH structure was grown on a GaAs substrate by liquid phase epitaxy, and the laser diode fabrication was the same as V-channeled substrate inner stripe...

  • Photoreflectance study of surface Fermi level in molecular beam epitaxial grown InAlAs.... Hwang, J.S.; Tyan, S.L. // Applied Physics Letters;6/13/1994, Vol. 64 Issue 24, p3314 

    Presents the photoreflectance study of a Fermi level in molecular beam epitaxial grown indium aluminum arsenide heterostructures. Implication of aluminum concentration for surface Fermi level at midgap; Use of Franz-Keldysh oscillations for built-in electric field determination; Details on the...

  • Observations of subpicosecond dynamics in GaAlAs laser diodes. Stix, Michael S.; Kesler, Morris P.; Ippen, Erich P. // Applied Physics Letters;6/23/1986, Vol. 48 Issue 25, p1722 

    We present results of pump-probe experiments on GaAlAs laser diodes indicating a 0.9-ps relaxation time associated with the device transmission. Subpicosecond, tunable near infrared pulses obtained by fiber compression were used to carry out the experiments. The data strongly support a model in...

  • AlGaAs/GaAs distributed feedback lasers with first-order grating fabricated by metalorganic chemical vapor deposition. Hirata, Shoji; Tamamura, Koshi; Mori, Yoshifumi; Kojima, Chiaki // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p63 

    Distributed feedback AlGaAs/GaAs lasers with first-order grating (1295 Ã…) were fabricated and successfully operated under continuous wave conditions at room temperature. A coupling coefficient of 115 cm-1 and a threshold current of 47 mA were obtained. A stable single-mode oscillation was...

  • High-power operation in self-sustained pulsating AlGaAs semiconductor lasers with multiquantum well active layer. Tanaka, T.; Kawano, T.; Kajimura, T. // Applied Physics Letters;12/19/1988, Vol. 53 Issue 25, p2471 

    Self-sustained pulsating optical power and kink level in AlGaAs semiconductor lasers are remarkably improved by introducing a multiquantum well (MQW) structure in the active layer. Stable fundamental transverse mode operation at output power up to 50 mW and self-sustained pulsation at output...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics