Direct evidence for co-aggregation of carbon and oxygen in Czochralski silicon

Shimura, F.; Hockett, R. S.; Reed, D. A.; Wayne, D. H.
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p794
Academic Journal
Direct evidence for the co-aggregation of oxygen and carbon is shown by secondary ion mass spectroscopy for a carbon-doped Czochralski silicon crystal subjected to a heat treatment at 1000 °C. In conjunction with infared absorption data, the carbon enhancement effect on oxygen precipitation at 1000 °C in high carbon silicon is explained with the catalytic effect of carbon in modifying the interfacial energy or the point defect ambient at the oxygen precipitate surface.


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