EL2-related defects in neutron irradiated GaAs1-xPx alloys

Muñoz, E.; García, F.; Jimenez, B.; Calleja, E.; Gomez, A.; Alcober, V.
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p798
Academic Journal
The generation of EL2-related defects in GaAsP alloys by fast neutron irradiation has been studied through deep level transient spectroscopy and photocapacitance techniques. After irradiation p-n junctions were not annealed at high temperatures. In the composition range x>0.4, fast neutrons generate a broad center at Ec-0.7 eV that it is suggested to belong to the EL2 family. The presence of photocapacitance quenching effects has been taken as a preliminary fingerprint to make the above assignment. From computer analysis of the nonexponential transient capacitance waveforms, evidence that neutron irradiation creates a family of midgap levels, EL2-related, is found.


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