TITLE

Electronic structure of the Si:O4 complex as related to the thermal donors in silicon

AUTHOR(S)
Gomes, Vivili M. S.; Leite, José R.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p824
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Rigorous self-consistent electronic structure calculations were carried out for complexes containing four interstitial oxygen atoms in silicon. The isolated tetrahedral site interstitial oxygen impurity was also investigated and the results were correlated to the complexes formation. Our calculations indicate that four oxygen impurities in Td symmetry surrounding a silicon atom at the regular lattice site are deep acceptor centers. It is also found that distortions which drive the complex to one of the observed symmetries, D2d, remove the impurity levels from the gap. Therefore, we conclude that these complexes do not show thermal donor actions in silicon as has been suggested.
ACCESSION #
9818342

 

Related Articles

  • Band alignments and defect levels in Si–HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning. Broqvist, Peter; Alkauskas, Audrius; Pasquarello, Alfredo // Applied Physics Letters;3/31/2008, Vol. 92 Issue 13, p132911 

    The determination of band alignments and defect levels is demonstrated for the technologically relevant Si–SiO2–HfO2 gate stack. The proposed scheme, which combines first-principles molecular dynamics for model generation and hybrid density functionals for electronic-structure...

  • Si—O bond structure in slow-ion deposited SiO2 films. Baek, D. H.; Kim, B. O.; Jeong, J. I.; Kim, C. Y.; Chung, J. W. // Journal of Applied Physics;3/1/1991, Vol. 69 Issue 5, p3354 

    Presents a study of silicon-oxygen bond structure in slow-ion deposited silicon oxide films. Characteristics of the bond structure; Analysis of the theoretical model of the bond structure; Development of the low-energy electron diffraction.

  • Effect of surface treatment on visible luminescence of porous silicon: Correlation with hydrogen.... Kumar, Rajesh; Kitoh, Yasuo // Applied Physics Letters;11/29/1993, Vol. 63 Issue 22, p3032 

    Investigates the effect of hydrogen and oxygen surface termination atoms on the visible luminescence of porous silicon. Relationship between photoluminescence and surface coverage; Utilization of atmospheric thermal treatment; Effect of oxygen incorporation in modifying the electronic...

  • MINDO/3 calculation of the electronic structure of silicon nitride. Gritsenko, V. A.; Novikov, Yu. N.; Morokov, Yu. N. // Physics of the Solid State;Aug97, Vol. 39 Issue 8, p1191 

    The electronic structure of silicon nitride has been calculated by the semiempirical quantumchemical method MINDO/3 in the cluster approximation. The effect of cluster size and of boundary conditions on the partial density of one-electron states is analyzed. The results of the calculation are...

  • Calculation of 2p levels for thermal double donors in silicon. Makarenko, L. F. // Semiconductors;Aug97, Vol. 31 Issue 8, p819 

    A two-center model is developed to explain the electronic structure of thermal double donors (TDD) in silicon. Calculations of 2p levels of singly ionized TDD's are performed in the effective mass approximation. From a comparison of the calculated results with the experimental data, the...

  • Prediction of unusual electronic properties of Si quantum films. Zhang, S.B.; Zunger, Alex // Applied Physics Letters;9/6/1993, Vol. 63 Issue 10, p1399 

    Presents the direct pseudopotential band structure calculations of thin silicon(001) films. Definition of free-standing quantum films; Features of the electronic structure of free-standing quantum films; Exhibition of oscillations by energies of some valence-band states.

  • Electronic properties of the single-domain Li/Si(001) surface. Kim, C.Y.; Kim, H.W.; Chung, J.W.; An, K.S.; Park, C.Y.; Kimura, A.; Kakizaki, A. // Applied Physics A: Materials Science & Processing;1997, Vol. 64 Issue 6, p597 

    We report surface electronic band structures of the single-domain Li-adsorbed Si(001) surface investigated by using synchrotron uv radiation. The spectral changes observed for the first two Li-induced ordered structures, a (2�2)-Li and a (2�1)-Li, suggest that these surfaces consist of...

  • Energy gap of nanoscale Si rods. Yorikawa, H.; Uchida, H.; Muramatsu, S. // Journal of Applied Physics;4/1/1996, Vol. 79 Issue 7, p3619 

    Presents a study which investigated the electronic structure of silicon rods by means of the tight-binding recursion method. Theoretical background; Computational approach; Results.

  • Electronic structure of the Er—O[sub 6] complex in silicon. Il’in, N. P.; Masterov, V. F. // Semiconductors;Sep97, Vol. 31 Issue 9, p886 

    The energy diagram of the Er-O[sub 6] complex in silicon is calculated. The square amplitudes of the wave functions of the complex on the erbium atom are determined. The results of our calculations show that the Er-O[sub 6] complex is an acceptor in silicon. In addition, it is possible that the...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics