TITLE

Crystal orientation dependence of silicon doping in molecular beam epitaxial AlGaAs/GaAs heterostructures

AUTHOR(S)
Wang, W. I.; Mendez, E. E.; Kuan, T. S.; Esaki, L.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p826
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Results on crystal orientation dependence of n- and p-type Si doping in molecular beam epitaxial GaAs are presented. High electron and hole mobilities in AlGaAs/GaAs heterostructures on high index planes are demonstrated for the first time. The doping results should prove useful for various transistor structures and complementary circuits. Also, due to the differences in the band structure for different orientations, quantum well heterostructures are likely to exhibit many interesting phenomena which are strongly orientation dependent.
ACCESSION #
9818340

 

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