TITLE

Amorphous silicon produced by a new thermal chemical vapor deposition method using intermediate species SiF2

AUTHOR(S)
Matsumura, Hideki; Tachibana, Hiroyuki
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p833
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Amorphous silicon (a-Si) films are deposited at about 320 °C by a new thermal chemical vapor deposition method. In this method, the gas mixture of intermediate species SiF2 and H2, decomposed thermally by the catalytic reaction, is used as a material gas. It is found that the photosensitivity of the a-Si film for AM1 of 100 mW/cm2 exceeds over 106 and that the spin density is as low as 1.5×1016 cm-3 for the film deposited with a rate of several Å/s.
ACCESSION #
9818338

 

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