TITLE

Effect of barrier thickness on the luminescence properties of AlAs/GaAs multiple quantum wells grown by molecular beam epitaxy

AUTHOR(S)
de Miguel, J. L.; Fujiwara, K.; Tapfer, L.; Ploog, K.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p836
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The influence of barrier layer thickness LB for LB >3 nm on the optical properties of all-binary AlAs/GaAs multiple quantum well heterostructures (MQWH) is studied by photoluminescence and excitation spectroscopy measurements at 2 K. In contrast to expectation for a simple coupling between the constituent GaAs quantum wells, MQWH samples with thinner barrier layers show excitonic peaks shifted to higher energies and exhibit a larger splitting between the electron to heavy-hole and electron to light-hole free excitons. This feature remains for different values of the otherwise constant well width within different series and when a small amount of Al is added to the well. Our detailed experimental data indicate that the mechanism responsible for the high-energy shift is intrinsic in nature. This unusual feature demonstrates the inadequacy of photoluminescence and excitation spectroscopy to determine well widths accurately.
ACCESSION #
9818337

 

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