Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning design

Lin, Hao-Hsiung; Lee, Si-Chen
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p839
Academic Journal
A novel emitter edge-thinning structure was adopted for Npn Al0.5Ga0.5As/GaAs single heterojunction bipolar transistors grown by liquid phase epitaxy. In this structure, the emitter edge was etched down to approximately 0.1 μm thick such that the surface and emitter-base junction depletion regions could touch each other. As a result, the current is blocked from the emitter periphery and the surface leakage current is reduced which improves the current gain especially at low operating current. The best device thus obtained shows a common emitter current gain of 12 500 at a collector current of 50 mA which is the highest gain reported to date for the heterojunction bipolar transistors. The current gain characteristics were indeed improved especially at a collector current below 10 μA.


Related Articles

  • Thermal stability of Si/Si1-xGex/Si heterojunction bipolar transistor structures grown by limited reaction processing. Noble, D. B.; Hoyt, J. L.; Gibbons, J. F.; Scott, M. P.; Laderman, S. S.; Rosner, S. J.; Kamins, T. I. // Applied Physics Letters;11/6/1989, Vol. 55 Issue 19, p1978 

    The thermal stability of Si/500-Å-thick Si0.77Ge0.23 bilayers grown on Si by limited reaction processing is studied as a function of Si capping layer thickness. After annealing for 4 min at 850 °C, misfit dislocation spacings increase monotonically with cap thickness from 0.5 μm for an...

  • n-Si/p-Si1-xGex/n-Si double-heterojunction bipolar transistors. Xu, Dan-Xia; Shen, Guang-Di; Willander, M.; Ni, Wei-Xin; Hansson, G. V. // Applied Physics Letters;6/27/1988, Vol. 52 Issue 26, p2239 

    Two different structures of n-Si/p-Si1-xGex/n-Si double-heterojunction bipolar transistors have been fabricated by molecular beam epitaxy. A common emitter current gain β of about 15 was demonstrated in one kind of structure and the β-IC curve has been investigated. In the other structure,...

  • AlGaAs/GaAs single heterojunction bipolar transistors grown on InP by molecular beam epitaxy. Agarwala, S.; Won, T.; Morkoç, H. // Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1151 

    AlGaAs/GaAs single heterojunction bipolar transistors grown on InP substrates by molecular beam epitaxy have been fabricated and tested. An eight-period 25 Ã…/25 Ã… In0.53Ga0.47As/GaAs strained-layer superlattice is incorporated in the buffer structure to reduce dislocation propagation to...

  • Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures. Hobson, W. S.; Pearton, S. J.; Jordan, A. S. // Applied Physics Letters;3/26/1990, Vol. 56 Issue 13, p1251 

    The redistribution of Zn in the base region of GaAs-AlGaAs heterojunction bipolar transistor structures during growth by organometallic vapor phase epitaxy has been examined with respect to the presence of Si doping in the emitter-contact, emitter, and collector/subcollector layers, and as a...

  • Low-Base-Resistance InP/InGaAs Heterojunction Bipolar Transistors with a Compositionally Graded-Base Structure. Ouchi, K.; Ohta, H.; Kudo, M.; Mishima, T. // Journal of Electronic Materials;Jul2005, Vol. 34 Issue 7, p1030 

    To reduce base resistance of an InP/InGaAs heterojunction bipolar transistor grown by gas-source molecular beam epitaxy, the doping characteristics of carbon-doped InGaAs and the dependence of doping concentration on current gain were investigated. Using a thicker graded base was found to...

  • AlGaAs/GaAs heterojunction bipolar transistors with heavily C-doped base layers grown by flow-rate modulation epitaxy. Makimoto, Toshiki; Kobayashi, Naoki; Ito, Hiroshi; Ishibashi, Tadao // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p39 

    AlGaAs/GaAs heterojunction bipolar transistors are fabricated using carbon-doped p-type GaAs base regions grown for the first time by flow-rate modulation epitaxy. Because of the much smaller diffusion coefficient of carbon atoms in GaAs than that of beryllium and other p-type impurities, sharp...

  • Monolithic integration of an InGaAsP/InP laser diode with heterojunction bipolar transistors. Shibata, Jun; Nakao, Ichiro; Sasai, Yoichi; Kimura, Soichi; Hase, Nobuyasu; Serizawa, Hiroyuki // Applied Physics Letters;1984, Vol. 45 Issue 3, p191 

    A monolithic integration of an InGaAsP laser diode together with current supplying circuit on a single InP substrate has been achieved. Heterojunction bipolar transistors (HBT's) have been constructed utilizing the burying epitaxial layers of the buried heterostructure laser diode. The laser has...

  • Project Targets Heterogeneous SoC Solutions.  // Microwaves & RF;Nov2010, Vol. 49 Issue 11, p20 

    The article focuses on the development of the silicon-germanium (SiGe) heterojunction-bipolar-transistor (HBT) in the three-year project of DOTFIVE in Europe.

  • InP/InGaAs SHBTs with 75 nm collector and f[subT] >500 GHz. Hafez, W.; Lai, Jie-Wei; Feng, M. // Electronics Letters;10/2/2003, Vol. 39 Issue 20, p1475 

    InP=InGaAs single heterojunction bipolar transistors (SHBTs) are fabricated exhibiting current-gain cutoff frequencies, f[SUBT] of 509 GHz. The 0.35×12 μm[SUP2] devices consist of a 25 nm graded base and a 75 nm collector, have a breakdown BV[SUBCEO] of 2.7 V, and operate at current...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics