TITLE

Super-gain AlGaAs/GaAs heterojunction bipolar transistors using an emitter edge-thinning design

AUTHOR(S)
Lin, Hao-Hsiung; Lee, Si-Chen
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p839
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel emitter edge-thinning structure was adopted for Npn Al0.5Ga0.5As/GaAs single heterojunction bipolar transistors grown by liquid phase epitaxy. In this structure, the emitter edge was etched down to approximately 0.1 μm thick such that the surface and emitter-base junction depletion regions could touch each other. As a result, the current is blocked from the emitter periphery and the surface leakage current is reduced which improves the current gain especially at low operating current. The best device thus obtained shows a common emitter current gain of 12 500 at a collector current of 50 mA which is the highest gain reported to date for the heterojunction bipolar transistors. The current gain characteristics were indeed improved especially at a collector current below 10 μA.
ACCESSION #
9818335

 

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