TITLE

Radiation resistance of InP solar cells under light illumination

AUTHOR(S)
Ando, Koushi; Yamaguchi, Masafumi
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p846
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The demonstration of superior radiation resistance of InP solar cells during solar cell operation is reported. High-energy electron irradiation effects on InP n+-p junction solar cells under light illumination are compared with those under dark conditions. The InP solar cells under light illumination are found to have less degradation in solar cell properties. This is explained by minority-carrier injection enhanced annealing of radiation-induced defects, analyzed using deep level transient spectroscopy, in the p-InP layer.
ACCESSION #
9818331

 

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