Radiation resistance of InP solar cells under light illumination

Ando, Koushi; Yamaguchi, Masafumi
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p846
Academic Journal
The demonstration of superior radiation resistance of InP solar cells during solar cell operation is reported. High-energy electron irradiation effects on InP n+-p junction solar cells under light illumination are compared with those under dark conditions. The InP solar cells under light illumination are found to have less degradation in solar cell properties. This is explained by minority-carrier injection enhanced annealing of radiation-induced defects, analyzed using deep level transient spectroscopy, in the p-InP layer.


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