TITLE

Investigation of transient diffusion effects in rapid thermally processed ion implanted arsenic in silicon

AUTHOR(S)
Sedgwick, T. O.; Michel, A. E.; Cohen, S. A.; Deline, V. R.; Oehrlein, G. S.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p848
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Arsenic dopant profile motion in ion implanted Si samples annealed for a few seconds at 1100 °C is adequately described by a model involving concentration enhanced diffusion. There is no evidence of an initial rapid diffusive transient. Diffusion in samples preannealed at 550 °C is consistent with this result.
ACCESSION #
9818330

 

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