TITLE

Microstructural, chemical, and electrical characterization of the beta silicon carbide thin-film silicon substrate interface

AUTHOR(S)
Ryu, J.; Kim, H. J.; Davis, Robert F.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p850
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The epitaxial β-SiC monocrystalline thin-film Si substrate interface region has been studied using cross-section transmission electron microscopy and chemical and charge carrier concentration profiling. Interface dip and interface rise phenomena involving changes in the carrier concentration have been observed in unintentionally doped and Al-doped samples, respectively. The primary cause of the interface dip is believed to be the interaction of the charge carriers with the high density of dislocations present in the interface region. The reason for the interface rise is the progressive accumulation of Al in the interface region which is facilitated by pipe diffusion in the dislocations.
ACCESSION #
9818328

 

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