TITLE

Analysis of light and current induced effects in hydrogenated amorphous silicon

AUTHOR(S)
Yamagishi, H.; Kida, H.; Kamada, T.; Okamoto, H.; Hamakawa, Y.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p860
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A systematic investigation has been made on the changes in mobility-lifetime product and defect density induced by light and current injection in amorphous silicon p-i-n junction. It has been found that these changes involve the creation and interconversion of two kinds of metastable defects, being induced merely by carrier trapping phenomenon.
ACCESSION #
9818323

 

Related Articles

  • Polarization Photosensitivity of a-Si:H/c-Si Heterojunctions. Nikolaev, Yu. A.; Rud’, V. Yu.; Rud’, Yu. V.; Terukov, E. I. // Semiconductors;Jul2000, Vol. 34 Issue 7, p790 

    The photosensitivity of heterojunctions formed by depositing thin amorphous films on silicon crystalline substrates is investigated. It is found that heterojunctions exhibit polarization photosensitivity, which is observed at an oblique incidence of the linearly polarized radiation on their...

  • Heterojunctions of InP with amorphous hydrogenated silicon. Wu, S.; Haneman, D. // Journal of Applied Physics;11/1/1993, Vol. 74 Issue 9, p5904 

    Reports on the fabrication and properties of p-InP:n-amorphous silicon heterojunctions. Result of optical internal photoemission measurements under various bias conditions; Diode quality factors in the diode expression; Description of the current densities of the junctions.

  • Evidence for hole traps at the amorphous silicon/amorphous silicon-germanium heterostructure.... Palsule, C.; Paschen, U. // Applied Physics Letters;1/27/1997, Vol. 70 Issue 4, p499 

    Presents evidence for hole traps at the amorphous silicon/amorphous silicon-germanium heterostructure interface. Independence of the transient signal magnitude from temperature or applied bias; Inconsideration of the traps as recombination centers; Observation on the concentration of traps.

  • Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x-ray photoelectron spectroscopy. Beaudoin, M.; Arsenault, C. J.; Izquierdo, R.; Meunier, M. // Applied Physics Letters;12/18/1989, Vol. 55 Issue 25, p2640 

    The interface between near stoichiometric hydrogenated amorphous silicon nitride (a-SiNx :H) deposited on hydrogenated amorphous silicon (a-Si:H) is studied using x-ray photoelectron spectroscopy as a function of the electron escape angle. This method allows the study of a-SiNx :H overlayers of...

  • Magnetoresistance after initial demagnetization in La0.67Sr0.33MnO3/SrTiO3/La0.67Sr0.33MnO3 magnetic tunnel junctions. Wertz, E. T.; Li, Q. // Applied Physics Letters;4/2/2007, Vol. 90 Issue 14, p142506 

    Magnetic tunnel junctions were fabricated from La0.67Sr0.33MnO3 (LSMO)/SrTiO3/La0.67Sr0.33MnO3 heterostructures. Junctions initially demagnetized at 5 K with an in-plane magnetic field showed larger tunneling magnetoresistance (TMR) and sharper switching than standard TMR scans. Magnetoresistive...

  • Defect engineering by surface chemical state in boron-doped preamorphized silicon. Yeong, S. H.; Srinivasan, M. P.; Colombeau, Benjamin; Chan, Lap; Akkipeddi, Ramam; Kwok, Charlotte T. M.; Vaidyanathan, Ramakrishnan; Seebauer, Edmund G. // Applied Physics Letters;9/3/2007, Vol. 91 Issue 10, p102112 

    The continual downscaling of silicon devices for integrated circuits requires the formation of pn junctions that are progressively shallower, incorporate increasing levels of electrically active dopant, and sustain minimal implantation damage. In the case of boron implanted into preamorphized...

  • Direct observation of the silicon nitride on amorphous silicon interface states. Gelatos, A. V.; Kanicki, J. // Applied Physics Letters;3/5/1990, Vol. 56 Issue 10, p940 

    We report on the investigation of the silicon nitride/hydrogenated amorphous silicon interface by capacitance measurements. We observe that the ‘‘slow’’ interface states are located inside the silicon nitride layer, while the energy distribution of the...

  • Optoelectrical properties of amorphous-crystalline silicon heterojunctions. Mimura, Hidenori; Hatanaka, Yoshinori // Applied Physics Letters;1984, Vol. 45 Issue 4, p452 

    Optoelectrical properties of a heterojunction consisting of p-type hydrogenated amorphous silicon (a-Si:H) on n-type crystalline silicon (c-Si) have been investigated by measuring current-voltage and capacitance-voltage characteristics and the temperature dependence of the dark current. It was...

  • Simulation studies on the effect of a buffer layer on the external parameters of hydrogenated amorphous silicon p-i-n solar cells. Kumar, K. Rajeev; Zeman, M. // Bulletin of Materials Science;2008, Vol. 31 Issue 5, p737 

    Device modeling of p-i-n junction amorphous silicon solar cells has been carried out using the amorphous semiconductor analysis (ASA) simulation programme. The aim of the study was to explain the role of a buffer layer in between the p- and i-layers of the p-i-n solar cell on the external...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics