Analysis of light and current induced effects in hydrogenated amorphous silicon

Yamagishi, H.; Kida, H.; Kamada, T.; Okamoto, H.; Hamakawa, Y.
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p860
Academic Journal
A systematic investigation has been made on the changes in mobility-lifetime product and defect density induced by light and current injection in amorphous silicon p-i-n junction. It has been found that these changes involve the creation and interconversion of two kinds of metastable defects, being induced merely by carrier trapping phenomenon.


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