Selective Ge deposition on Si using thermal decomposition of GeH4

Ishii, Hiromu; Takahashi, Yasuo; Murota, Junichi
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p863
Academic Journal
Deposition characteristics of Ge using thermal decomposition of GeH4 are studied. The deposition rate of Ge in a surface reaction region at temperatures below 410 °C is formulated as a function of the deposition temperature and GeH4 partial pressure. Selective deposition of Ge occurs reproducibly in the lower temperature range below 410 °C. The cause of the suppression of selectivity and epitaxial growth at deposition temperatures above 450 °C is confirmed as oxide contamination on the substrate.


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