Antiphase boundaries in GaAs

Cho, N.-H.; De Cooman, B. C.; Carter, C. B.; Fletcher, R.; Wagner, D. K.
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p879
Academic Journal
Antiphase boundaries in GaAs have been produced by growing the GaAs on {001} Ge substrates. The GaAs was grown by the technique of organometallic vapor phase epitaxy to a thickness in excess of 1 μm. The antiphase boundaries are shown to be faceted with facets parallel to the {110} planes being particularly common. The rigid-body translation at the different facet planes is shown to be small for the {110} planes but it can be large for other facet planes.


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