TITLE

GaAs/GaAs1-ySby strained-layer superlattices grown by molecular beam epitaxy

AUTHOR(S)
Klem, J.; Peng, C. K.; Henderson, T.; Morkoç, H.; Otsuka, N.; Choi, C.; Yu, P. W.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p885
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
GaAs/GaAs1-ySby superlattices have been grown by molecular beam epitaxy and characterized by x-ray diffraction, transmission electron microscopy, and low-temperature photoluminescence. Transmission electron microscopy and x-ray results indicate that high quality superlattices may be grown for lattice mismatches up to 3.1%. These structures exhibit luminescence at wavelengths as long as 1.7 μm, making them candidates for infrared device applications.
ACCESSION #
9818314

 

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