Solid phase epitaxy of deposited amorphous Ge on GaAs

Palmstro\m, C. J.; Galvin, G. J.
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p815
Academic Journal
Solid phase epitaxial growth of electron beam deposited amorphous germanium on GaAs has been obtained. Contamination at the Ge/GaAs interface is observed to impede and even prevent epitaxy of the deposited Ge layer. Complete epitaxy of the Ge was obtained by thermal annealing (400 °C for 1 h) of layers deposited on in situ sputter cleaned GaAs substrates.


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