Solid phase epitaxy of deposited amorphous Ge on GaAs

Palmstro\m, C. J.; Galvin, G. J.
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p815
Academic Journal
Solid phase epitaxial growth of electron beam deposited amorphous germanium on GaAs has been obtained. Contamination at the Ge/GaAs interface is observed to impede and even prevent epitaxy of the deposited Ge layer. Complete epitaxy of the Ge was obtained by thermal annealing (400 °C for 1 h) of layers deposited on in situ sputter cleaned GaAs substrates.


Related Articles

  • Deep-level transient spectroscopy detection of defects created in epitaxial GaAs after electron-beam metallization. Nel, M.; Auret, F. D. // Journal of Applied Physics;9/1/1988, Vol. 64 Issue 5, p2422 

    Deals with a study that characterized the defects caused during electron beam (EB) metallization of different metals on undoped epitaxial gallium arsenide layers. Analysis of the maximum energy of the electrons causing the defects; Determination of the introduction rates and annealing behavior...

  • Crack formation in GaAs heteroepitaxial films on Si and SiGe virtual substrates. Yang, V. K.; Groenert, M.; Leitz, C. W.; Pitera, A. J.; Currie, M. T.; Fitzgerald, E. A. // Journal of Applied Physics;4/1/2003, Vol. 93 Issue 7, p3859 

    We have determined the critical cracking thickness, or the thickness beyond which crack formation is favored, in GaAs films grown on Si and SiGe virtual substrates analytically and experimentally. The analytical model predicts a critical cracking thickness proportional to the biaxial modulus and...

  • Epitaxial growth of MgO on (100)GaAs using ultrahigh vacuum electron-beam evaporation. Hung, L.S.; Zheng, L.R. // Applied Physics Letters;6/22/1992, Vol. 60 Issue 25, p3129 

    Examines the epitaxial growth of magnesium oxide (MgO) on (100)gallium arsenide with electron-beam evaporation. Determination of the thin film composition with Rutherford backscattering spectroscopy; Investigation on the surface morphology of the film with scanning electron microscopy;...

  • Growth and characterization of GaAs/Ge epilayers grown on Si substrates by molecular beam epitaxy. Sheldon, P.; Yacobi, B. G.; Jones, K. M.; Dunlavy, D. J. // Journal of Applied Physics;12/1/1985, Vol. 58 Issue 11, p4186 

    Presents a study which examined growth and characterization of gallium arsenide/germanium epilayers grown on silicon substrates by molecular beam epitaxy. Method of the study; Results and discussion; Conclusion.

  • Diffusion of As and Ge during growth of GaAs on Ge substrate by molecular-beam epitaxy: Its effect on the device electrical characteristics. Chand, N.; Klem, J.; Henderson, T.; Morkoç, H. // Journal of Applied Physics;5/15/1986, Vol. 59 Issue 10, p3601 

    Focuses on the surface-exchange reaction and diffusion of arsenic and germanium (Ge) species during crystal growth by molecular-beam epitaxy. Effect of the diffusion on the electrical characteristics of gallium arsenide (GaAs)/Ge heterojunctions; Characteristics of a normal forward biased...

  • Reconstruction controlled dopant incorporation and ‘‘coercion’’ effects in molecular-beam epitaxial germanium grown on gallium arsenide. Wood, C. E. C.; Tabatabaei, S. A.; Mimomye, L. V.; Grober, L. M. // Journal of Applied Physics;8/15/1994, Vol. 76 Issue 4, p2197 

    Reports on reconstruction controlled dopant incorporation and coercion effects in molecular-beam epitaxial germanium grown on gallium arsenide. Experimental procedures for the preparation of the germanium films; Nucleation and growth under low incident arsenic flux; Graphical representation of...

  • Effect of ion sputtering on Ge epitaxy on GaAs(110). Wang, X.-S.; Brake, J. // Applied Physics Letters;3/18/1996, Vol. 68 Issue 12, p1660 

    Examines the effect of ion sputtering on germanium epitaxy on Gallium arsenide. Thermodynamic considerations of thin film growth; Effect of the vacancy island on the nucleation density; Measurement of temperature using an optical pyrometer and thermocouple; Role of kinetics and energetics in...

  • Heteroepitaxial growth of Ge films on (100) GaAs by pyrolysis of digermane. Eres, Djula; Lowndes, Douglas H.; Tischler, J. Z.; Sharp, J. W.; Geohegan, D. B.; Pennycook, S. J. // Applied Physics Letters;8/28/1989, Vol. 55 Issue 9, p858 

    Pyrolysis of high-purity digermane (Ge2 H6 ) has been used to grow epitaxial Ge films of high crystalline quality on (100) GaAs substrates in a low-pressure environment. X-ray double-crystal diffractometry shows that fully commensurate, coherently strained epitaxial Ge films can be grown on...

  • Germanium/gallium arsenide alloys grown by molecular-beam epitaxy. Baird, R. J.; Holloway, H.; Tamor, M. A.; Hurley, M. D.; Vassell, W. C. // Journal of Applied Physics;1/1/1991, Vol. 69 Issue 1, p226 

    Presents a study on molecular beam epitaxy-grown layers of germanium (Ge) and gallium arsenide (GaAs) alloys. Electronic properties of Ge and GaAs alloys; Optical absorption and energy gaps of Ge and GaAs alloys; Explanation for the presence of nonstoichiometry in the GaAs component.


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics