TITLE

High quality epitaxial GaAs and InP wafers by isoelectronic doping

AUTHOR(S)
Beneking, H.; Narozny, P.; Emeis, N.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p828
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It is shown that strained isoelectronically doped buffer layers grown on GaAs and InP wafers allow one to reduce the dislocation density drastically by a factor greater than 20. Correspondingly, the photoluminescence efficiency of near-band-edge emission is enhanced by about the same factor. By deep level transient spectroscopy measurements practically no deep levels can be detected in contrast to uncoated wafers. Applied to device fabrication a great improvement is found in comparison to conventionally fabricated optoelectronic and electronic devices.
ACCESSION #
9818297

 

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