TITLE

Schottky barrier height measurements of epitaxial NiSi2 on Si

AUTHOR(S)
Hauenstein, R. J.; Schlesinger, T. E.; McGill, T. C.; Hunt, B. D.; Schowalter, L. J.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p853
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Photoresponse measurements of the Schottky barrier heights of epitaxial NiSi2 layers on nondegenerate n-(111) Si, for type-A and type-B orientations, have been performed. The type-A and type-B cases are consistently observed to differ in barrier height by greater than 0.1 eV. We obtain measured values for [lowercase_phi_synonym]B0 (at T=300 K) of 0.62±0.01 eV and 0.77±0.05 eV for type A and B, respectively.
ACCESSION #
9818293

 

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