Low-temperature impact ionization rates in (111) oriented InP

Osaka, Fukunobu; Kishi, Yutaka; Kobayashi, Masahiro; Mikawa, Takashi
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p865
Academic Journal
Impact ionization rates in (111) oriented InP have been derived in the temperature range 77–293 K from photomultiplication data measured on a planar-type InP avalanche diode, and have been compared with those in (100) oriented InP. It has been found that there is no marked difference in electron ionization rates between the <111> and <100> orientations. This result confirms that no ballistic impact ionization occurs in InP at the measured electric field range of 4.1×105 V cm≤E≤5.6×105 V cm.


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