n-MoSe2/p-WSe2 heterojunctions

Späh, R.; Lux-Steiner, M.; Obergfell, M.; Bucher, E.; Wagner, S.
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p871
Academic Journal
The preparation of n-MoSe2/p-WSe2 heterojunctions by epitaxial growth of WSe2 (Eg=1.16 eV) on MoSe2 (Eg=1.06 eV) substrates is reported. The two semiconductors are nearly lattice matched along their hexagonal (001) base plane with Δa/a=0.25%. Diode capacitance-voltage measurements show that the band edges of MoSe2 and WSe2 are aligned within ∼0.1 eV. The diode forward current at room temperature is carried by recombination in the depletion region.


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