Inverted base-collector tunnel transistors

Bonnefoi, A. R.; Chow, D. H.; McGill, T. C.
October 1985
Applied Physics Letters;10/15/1985, Vol. 47 Issue 8, p888
Academic Journal
Two novel three-terminal devices based on tunneling in quantum well and quantum barrier heterostructures are proposed and analyzed theoretically. In both devices, the relative positions of the base and collector are interchanged from conventional emitter-base-collector sequence. This provides a means for obtaining negligible base currents and large current transfer ratios. In both cases, a base voltage controls the emitter-collector tunneling current by shifting the resonances in a quantum well. Calculations indicate that significant variations in the emitter-collector current-voltage characteristics can be obtained for reasonable base-emitter voltages. We call the two devices a Stark effect transistor and a negative resistance Stark effect transistor, respectively.


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