High resolution transmission electron microscopy of proton-implanted gallium arsenide

Sadana, D. K.; Zavada, J. M.; Jenkinson, H. A.; Sands, T.
October 1985
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p691
Academic Journal
High resolution transmission electron microscopy has been performed on cross-sectional specimens from high dose (1016 cm-2) H+-implanted (100) n-GaAs (300 keV at room temperature). It was found that annealing at 500 °C created small (20–50 Å) loops on {111} planes near the projected range Rp (3.2 μm). At 550–600 °C, voids surrounded by stacking faults, microtwins, and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.


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