Determination of low levels of carbon in Czochralski silicon

Oates, A. S.; Newman, R. C.; Woolley, R.; Davies, G.; Lightowlers, E. C.; Binns, M. J.; Wilkes, J. G.
October 1985
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p705
Academic Journal
The C(3) vibrational lines at 865 and 1115 cm-1 are shown to correlate in intensity with the 790-meV vibronic band in irradiated Czochralski silicon. The C(3)/790 meV lines may be used as a sensitive measure of the concentration of carbon in silicon.


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