TITLE

Limited reaction processing: Silicon epitaxy

AUTHOR(S)
Gibbons, J. F.; Gronet, C. M.; Williams, K. E.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p721
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We introduce a new technique, limited reaction processing, in which radiant heating is used to provide rapid, precise changes in the temperature of a substrate to control surface reactions. This process was used to fabricate thin layers of high quality epitaxial silicon. Abrupt transitions in doping concentration at the epitaxial layer/substrate interface were achieved for undoped films deposited on heavily doped substrates.
ACCESSION #
9818241

 

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