Attainment of transparent boron-implanted layers for silicon solar cell applications

Spitzer, M. B.; Keavney, C. J.
October 1985
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p731
Academic Journal
The formation of boron-doped p+ layers that are transparent to minority-carrier transport is reported. Ion implantation is used to limit the peak dopant concentration to 5×1018 cm-3 so as to avoid deleterious heavy doping effects. Solar cell open circuit voltage of 657 mV has been obtained in this way. The importance of surface passivation is indicated.


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