Photocurrent multiplication in ion implanted lateral In0.2Ga0.8As/GaAs strained-layer superlattice photodetectors

Bulman, G. E.; Myers, D. R.; Zipperian, T. E.; Dawson, L. R.; Wiczer, J. J.; Biefeld, R. M.
October 1985
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p733
Academic Journal
We demonstrate the first Be+-implanted lateral In0.2Ga0.8As/GaAs strained-layer superlattice (SLS) avalanche photodetector. This planar device exhibits low capacitance (<1 pF), low dark current (less than 6 nA at -60 V), and large active area (100 μm × 250 μm at -50 V). In addition, an uncoated external quantum efficiency of 50% at -50 V between 775 and 880 nm is observed with response continuing to 1.03 μm. Detailed photocurrent measurements confirm the occurrence of photocurrent multiplication and indicate that the ionization coefficient of electrons is larger than that of holes for transport in the plane of the SLS. This work demonstrates the advantages of exploiting the preferred transport direction that occurs in superlattice structures through the use of ion implantation.


Related Articles

  • Disorder of ZnSe/ZnS strained-layer superlattices by N[sup +] or Li[sup +] ion implantation and... Yokogawa, Toshiya; Saitoh, Tohru; Narusawa, Tadashi // Applied Physics Letters;1/7/1991, Vol. 58 Issue 1, p53 

    Demonstrates layer disordering of ZnSe/ZnS strained-layer superlattices induced by low-damage N[sup +] or Li[sup +] ion implantation and low-temperature annealing. Observation of the interdiffusion of Se and S atoms by secondary-ion mass spectrometry analyses.

  • Implantation damage in GaAs-AlAs superlattices of different layer thickness. Dobisz, E.A.; Fatemi, M.; Dietrich, H.B.; McCormick, A.W.; Harbison, J.P // Applied Physics Letters;9/9/1991, Vol. 59 Issue 11, p1338 

    Examines the implantation damage in GaAs-AlAs superlattices of different layer thickness. Values of the amorphization threshold doses for the AlAs superlattice; Broadening of the peak by double crystal x-ray diffraction.

  • Destruction of the quantum well structure of thin silicon-germanium superlattices by ion.... Freiman, W.; Beserman, R. // Applied Physics Letters;4/6/1992, Vol. 60 Issue 14, p1673 

    Investigates the destruction of the quantum well structure of thin silicon-germanium (Ge) superlattices (SL) by ion implantation. Effect of arsenic ion implantation into the SL; Transition from a SL structure to a mixed crystal; Raman spectra of Ge-implanted SL.

  • Scan speed effects on enhanced disordering of GaAs-AlGaAs superlattices by focused Si ion beam implantation. Ishida, Koji; Matsui, Kazunori; Fukunaga, Toshiaki; Kobayashi, Junji; Morita, Tetsuo; Miyauchi, Eizo; Nakashima, Hisao // Applied Physics Letters;7/13/1987, Vol. 51 Issue 2, p109 

    We studied compositional disordering of GaAs-AlGaAs superlattices induced by focused Si ion beam implantation and subsequent annealing with different doses and scan speeds by secondary ion mass spectrometry and Rutherford backscattering spectrometry. The results indicate that the Al-Ga...

  • Layer intermixing in 1 MeV implanted GaAs/AlGaAs superlattices. Lee, S.-Tong; Chen, Samuel; Rajeswaran, G.; Braunstein, G.; Fellinger, P.; Madathil, J. // Applied Physics Letters;3/20/1989, Vol. 54 Issue 12, p1145 

    Layer intermixing in MeV Si-implanted GaAs/AlGaAs superlattices (SLs) with doses between 3×1015 and 1×1016 /cm2 has been examined by transmission electron microscopy and secondary-ion mass spectrometry. After either rapid thermal annealing at 1050 °C for 10 s or furnace annealing at...

  • MeV oxygen ion implantation induced compositional intermixing in AlAs/GaAs superlattices. Xiong, Fulin; Tombrello, T. A.; Schwartz, C. L.; Schwarz, S. A. // Applied Physics Letters;8/27/1990, Vol. 57 Issue 9, p896 

    We present in this letter an investigation of compositional intermixing in AlAs/GaAs superlattices induced by 2 MeV oxygen ion implantation. The results are compared with implantation at 500 keV. In addition to Al intermixing in the direct lattice damage region by nuclear collision spikes, as is...

  • Trap-limited interstitial diffusion and enhanced boron clustering in silicon. Stolk, P.A.; Gossmann, H.-J. // Applied Physics Letters;1/30/1995, Vol. 66 Issue 5, p568 

    Examines the use of superlattices doped with boron to detect the diffusion of self-interstitials in silicon. Generation of interstitials in the near-surface region by silicon implantation; Estimation for the concentration of traps; Diffusion of interstitials beyond the trapping length for long...

  • Dose-dependent mixing of AlAs-GaAs superlattices by Si ion implantation. Venkatesan, T.; Schwarz, S. A.; Hwang, D. M.; Bhat, R.; Koza, M.; Yoon, H. W.; Mei, P.; Arakawa, Y.; Yariv, A. // Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p701 

    The effects of Si ion implantation and annealing on AlAs-GaAs superlattices are examined with secondary ion mass spectrometry (SIMS), Rutherford backscattering spectrometry (RBS), and transmission electron microscopy (TEM). Samples implanted with 180 keV 28Si+ of doses ranging from 3×1013 to...

  • Selective compositional mixing in GaAs/AlGaAs superlattice induced by low dose Si focused ion beam implantation. Chen, P.; Steckl, A. J. // Journal of Applied Physics;6/1/1995, Vol. 77 Issue 11, p5616 

    Investigates the aluminum-gallium (Al-Ga) interdiffusion induced by silicon focused ion beam implantation and subsequent rapid thermal annealing (RTA) in an Al[sub0.3]Ga[sub0.7]As/GaAs superlattice structure. Advantage of using RTA; Illustration of the superlattice structure used; Expression...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics