Anomalous transport in PbTe doping superlattices

Jantsch, W.; Bauer, G.; Pichler, P.; Clemens, H.
October 1985
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p738
Academic Journal
The Hall coefficient of p-PbTe doping superlattices changes sign twice between 100 and 300 K. This effect is reported here for the first time and explained in terms of the temperature dependences of the static dielectric constant and the electron and hole mobilities. Below 140 K, persistent photoconductivity occurs, which is explained by electron trapping by deep states.


Related Articles

  • Laser-modulated epitaxy of lead telluride. Plyatsko, S. V. // Semiconductors;Mar1998, Vol. 32 Issue 3, p270 

    The dependences of the density and mobility of free current carriers in PbTe/KCl(KBr) layers, grown by epitaxy modulated by infrared laser radiation, on the power density W of the laser radiation at the target and the substrate temperature T[sub s] were investigated. It is shown that the...

  • Short Optical Pulse Polarization Dynamics in a Nonlinear Birefringent Doped Fiber. Elyutin, S. O.; Maimistov, A. I. // Journal of Experimental & Theoretical Physics;Oct2001, Vol. 93 Issue 4, p737 

    Numerical solutions are obtained of the full self-consistent system of equations for the counter, rotating polarization components of the field of a short optical pulse propagating in a nonlinear birefringent fiber and in the ensemble of the energy-level degenerate doped resonance atoms...

  • Ca-doping in filamentary YBa[sub 2]Cu[sub 3]O[sub y] superconductors. Ohmiya, H.; Goto, T.; Watanabe, K. // AIP Conference Proceedings;2002, Vol. 614 Issue 1, p564 

    Ca-doping in filamentary YBa[sub 2]Cu[sub 3]O[sub y] superconductors was examined to improve the grain boundary properties. The filamentary precursors of Y[sub 0.925]Ca[sub 0.075]Ba[sub 2]Cu[sub 3]O[sub y] were prepared by dry spinning through a homogeneous aqueous solution containing mixed...

  • Low power (bistable) opto-electrical threshold switches with high gain based on n-i-p-i doping.... Hofler, A.; Gulden, K.H.; Kiesel, P.; Kneissl, M.; Knupfer, B.; Riel, P.; Dohler, G.H.; Trankle, G.; Weimann, G. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3399 

    Investigates low power opto-electrical threshold switches with high gain based on n-i-p-i doping superlattices. Presentation of a configuration consisting of a two terminal photodiode and a three-terminal photoconductive detector structure; Suitability of switches for monolithical integration...

  • Novel amorphous silicon doping superlattice device with bidirectional S-shaped negative.... Liu, C.R.; Fang, Y.K. // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p177 

    Investigates the fabrication of amorphous silicon doping superlattice device with bidirectional S-shaped negative differential characteristics. Reason for the occurrence of S-shaped switching phenomenon; Application of electronic transportation theory; Illustration of band diagram at thermal...

  • Strong luminescence from Tamm states in modulation-doped superlattices. Henriques, A. B. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p691 

    Calculations are presented for the photoluminescence spectrum of InP/In[sub 0.53]Ga[sub 0.47]As superlattices doped with Si. When doping is confined to the inner barriers, the photoluminescence is dominated by transitions between Tamm states in the electron and valence bands, which contribute...

  • Resistivity of boron-doped polycrystalline silicon. Ghannam, M. Y.; Dutton, R. W. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1222 

    The doping dependence of the resistivity of polycrystalline silicon deposited by low-pressure chemical vapor deposition and implanted with boron is investigated. At doping concentrations <1018 cm-3, the resistivity is almost two orders of magnitude larger than that of crystalline silicon. At...

  • Effect of silver in Bi[sub 1.7]Pb[sub 0.3]Sr[sub 2-x]Ag[sub x]Ca[sub 2]Cu[sub 3]O[sub y]. Yu, Y.; Jin, X. // Applied Physics Letters;7/24/1995, Vol. 67 Issue 4, p545 

    Examines the synthesis of silver-doped Bi[sub 1.7]Pb[sub 0.3]Sr[sub 2-x]Ag[sub x]Ca[sub 2]Cu[sub 3]O[sub y] superconductor. Effects of silver doping on the melting point of oxide superconductor; Increase in the distance between strontium oxide and copper oxide layers; Creation of oxygen vacancy...

  • Limitations to n-type doping in diamond: The phosphorus-vacancy complex. Jones, R.; Lowther, J. E.; Goss, J. // Applied Physics Letters;10/21/1996, Vol. 69 Issue 17, p2489 

    In spite of large concentrations of phosphorus being incorporated into diamond, the material often remains insulating. It is argued that this occurs through the formation of phosphorus-vacancy complexes which are deep acceptors and compensate any donor. The complex is analyzed using a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics