Anomalous transport in PbTe doping superlattices

Jantsch, W.; Bauer, G.; Pichler, P.; Clemens, H.
October 1985
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p738
Academic Journal
The Hall coefficient of p-PbTe doping superlattices changes sign twice between 100 and 300 K. This effect is reported here for the first time and explained in terms of the temperature dependences of the static dielectric constant and the electron and hole mobilities. Below 140 K, persistent photoconductivity occurs, which is explained by electron trapping by deep states.


Related Articles

  • Laser-modulated epitaxy of lead telluride. Plyatsko, S. V. // Semiconductors;Mar1998, Vol. 32 Issue 3, p270 

    The dependences of the density and mobility of free current carriers in PbTe/KCl(KBr) layers, grown by epitaxy modulated by infrared laser radiation, on the power density W of the laser radiation at the target and the substrate temperature T[sub s] were investigated. It is shown that the...

  • Short Optical Pulse Polarization Dynamics in a Nonlinear Birefringent Doped Fiber. Elyutin, S. O.; Maimistov, A. I. // Journal of Experimental & Theoretical Physics;Oct2001, Vol. 93 Issue 4, p737 

    Numerical solutions are obtained of the full self-consistent system of equations for the counter, rotating polarization components of the field of a short optical pulse propagating in a nonlinear birefringent fiber and in the ensemble of the energy-level degenerate doped resonance atoms...

  • Ab initio investigation of doping-enhanced electronic and vibrational second hyperpolarizability of polyacetylene chains. Champagne, Benoı⁁t; Spassova, Milena; Jadin, Jean-Benoit; Kirtman, Bernard // Journal of Chemical Physics;3/1/2002, Vol. 116 Issue 9, p3935 

    The effect of charging on the longitudinal second hyperpolarizability of polyacetylene (PA) chains containing up to nearly 70 carbon atoms has been investigated ab initio by characterizing chains with and without an explicit alkali atom (Li, Na, K) as dopant. Whereas charging dramatically...

  • Low power (bistable) opto-electrical threshold switches with high gain based on n-i-p-i doping.... Hofler, A.; Gulden, K.H.; Kiesel, P.; Kneissl, M.; Knupfer, B.; Riel, P.; Dohler, G.H.; Trankle, G.; Weimann, G. // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3399 

    Investigates low power opto-electrical threshold switches with high gain based on n-i-p-i doping superlattices. Presentation of a configuration consisting of a two terminal photodiode and a three-terminal photoconductive detector structure; Suitability of switches for monolithical integration...

  • Two-photon pumped upconverted lasing in dye doped polymer waveguides. Mukherjee, Anadi // Applied Physics Letters;6/28/1993, Vol. 62 Issue 26, p3423 

    Measures a two-photon pumped upconverted lasing in dye doped polymer waveguides. Description of a fabricated slab waveguide; Use of a sensitive power meter to calibrate photomultiplier tube response; Correlation between spectral narrowing and the behavior of the upconversion signal.

  • Novel amorphous silicon doping superlattice device with bidirectional S-shaped negative.... Liu, C.R.; Fang, Y.K. // Applied Physics Letters;7/12/1993, Vol. 63 Issue 2, p177 

    Investigates the fabrication of amorphous silicon doping superlattice device with bidirectional S-shaped negative differential characteristics. Reason for the occurrence of S-shaped switching phenomenon; Application of electronic transportation theory; Illustration of band diagram at thermal...

  • Strong luminescence from Tamm states in modulation-doped superlattices. Henriques, A. B. // Applied Physics Letters;2/5/2001, Vol. 78 Issue 6, p691 

    Calculations are presented for the photoluminescence spectrum of InP/In[sub 0.53]Ga[sub 0.47]As superlattices doped with Si. When doping is confined to the inner barriers, the photoluminescence is dominated by transitions between Tamm states in the electron and valence bands, which contribute...

  • Broadband semiconductor superlattice detector for THz radiation. Klappenberger, F.; Ignatov, A. A.; Winnerl, S.; Schomburg, E.; Wegscheider, W.; Renk, K. F.; Bichler, M. // Applied Physics Letters;3/19/2001, Vol. 78 Issue 12, p1673 

    We report on a broadband GaAs/AlAs superlattice detector for THz radiation; a THz field reduces the current through a superlattice, which is carried by miniband electrons, due to modulation of the Bloch oscillations of the miniband electrons. We studied the detector response, by use of a free...

  • Resistivity of boron-doped polycrystalline silicon. Ghannam, M. Y.; Dutton, R. W. // Applied Physics Letters;4/11/1988, Vol. 52 Issue 15, p1222 

    The doping dependence of the resistivity of polycrystalline silicon deposited by low-pressure chemical vapor deposition and implanted with boron is investigated. At doping concentrations <1018 cm-3, the resistivity is almost two orders of magnitude larger than that of crystalline silicon. At...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics