TITLE

Growth of CdTe on GaAs by organometallic vapor phase heteroepitaxy

AUTHOR(S)
Ghandhi, Sorab K.; Taskar, Nikhil R.; Bhat, Ishwara B.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p742
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Organometallic vapor phase heteroepitaxy of CdTe on (100) oriented GaAs substrates is described in this letter. It is shown that high quality CdTe layers can be grown on GaAs substrates over the temperature range 350–440 °C by this process. Growth under different temperatures and reactant partial pressures is described. Conditions are outlined for obtaining optimum photoluminescence properties, with suppression of the defect level associated with the cadmium vacancy. Electron channeling data are presented to indicate that excellent epitaxy is achieved by this process. The orientation of the epitaxial layer is found to be the same as that of the substrate.
ACCESSION #
9818225

 

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