TITLE

Analysis of ion induced surface damage on silicon etched in a CF4 plasma

AUTHOR(S)
Thomas, John H.; McGinn, J. T.; Hammer, L. H.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p746
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Etchant residue and backscattered material have been observed on silicon surfaces etched in a CF4 plasma. In addition to chemical contamination, the surface is damaged by ion bombardment with dissociated CF4 ions. X-ray photoelectron spectroscopy and reflection high-energy electron diffraction were used to study the extent of the damage and how it correlates with surface contamination. At low ion energies, a well ordered crystal surface is observed in the presence of fluorine contamination. At higher ion energies (>400 V), the silicon surface is contaminated by backscattered nickel from an unshielded contact lead and the silicon surface becomes polycrystalline.
ACCESSION #
9818223

 

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