TITLE

Seeding lateral epitaxy of silicon on insulator with improved seed and cap structure by pseudoline shaped electron beam annealing

AUTHOR(S)
Suguro, K.; Inoue, T.; Hamasaki, T.; Yoshii, T.; Yoshimi, M.; Takahashi, M.; Taniguchi, K.; Kashiwagi, M.; Tango, H.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p696
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Seeding lateral epitaxy for silicon films on an insulator, using pseudoline shaped electron beam annealing, has been investigated. Higher oscillation frequency, higher beam scanning velocity, and suitable oscillation amplitude were effective to achieve large uniform silicon on insulator (SOI) films with the aid of simulating temperature distribution in silicon substrate. Furthermore, improved seed with tapered edge and capping layer of tungsten/insulator were employed to obtain 300 μm×1.3 mm single-crystal SOI films on a 1.3-μm SiO2 layer. Stacked SOI devices were successfully fabricated with low-temperature planarization process. 218 ps/stage propagation delay and 17 pJ power-delay product were obtained.
ACCESSION #
9818202

 

Related Articles

  • Effect of threading screw and edge dislocations on transport properties of 4H–SiC homoepitaxial layers. Maximenko, S. I.; Freitas Jr., J. A.; Myers-Ward, R. L.; Lew, K.-K.; VanMil, B. L.; Eddy Jr., C. R.; Gaskill, D. K.; Muzykov, P. G.; Sudarshan, T. S. // Journal of Applied Physics;Jul2010, Vol. 108 Issue 1, p013708 

    Local recombination properties of threading screw and edge dislocations in 4H–SiC epitaxial layers have been studied using electron beam induced current (EBIC). The minority carrier diffusion length in the vicinity of dislocations was found to vary with dislocation type. Screw...

  • Silicon epitaxy grown by electron-beam evaporation in ultrahigh vacuum at 200 degrees C. Yung-Jen Lin; Tri-Rung Yew // Applied Physics Letters;9/21/1992, Vol. 61 Issue 12, p1396 

    Examines silicon epitaxial growth by electron-beam evaporation in ultrahigh vacuum system. Effects of thermal-desorption process on native oxide; Dependence of the epitaxial growth condition on growth rate; Formation of amorphous silicon by high growth rates.

  • Heteroepitaxial growth of Ge films on Si substrates by molecular beam epitaxy. Zhou, G. L.; Chen, K. M.; Jiang, W. D.; Sheng, C.; Zhang, X. J.; Wang, Xun // Applied Physics Letters;11/28/1988, Vol. 53 Issue 22, p2179 

    A new approach of growing thick Ge layers on Si substrates by molecular beam epitaxy is presented. A 30–80 Å thick Ge overlayer is first deposited on the Si(100) substrate at room temperature. By thermally annealing the sample to 300 or 500 °C for 10 min, the Ge atoms cluster into...

  • Molecular beam epitaxial growth of high quality GaAs on untilted (001) Si substrates assisted by electron beam irradiation. Leem, Jae-Young; Kim, Deuk-Young; Kang, Tae-Won; Lee, Jae-Jin; Oh, Jae-Eung // Applied Physics Letters;11/19/1990, Vol. 57 Issue 21, p2228 

    Using molecular beam epitaxy assisted by an electron beam irradiation with a beam energy of 50 keV at an angle of incidence 5°, we have successfully grown high quality GaAs layers on untilted (001)Si substrates. Raman spectra show that this technique reduces crystalline imperfections usually...

  • Direct observation of growth front movement in electron beam recrystallization of silicon layer on insulator. Inoue, Tomoyasu; Hamasaki, Toshihiko // Applied Physics Letters;4/13/1987, Vol. 50 Issue 15, p971 

    A high-speed movie technique was used to investigate the growth front movement during electron beam recrystallization of thin silicon layers on insulating material. In a laterally epitaxial growth process, it was clearly observed that the molten zone shape dramatically changes across a seed...

  • Relaxed, low threading defect density Si0.7Ge0.3 epitaxial layers grown on Si by rapid thermal chemical vapor deposition. Watson, G. Patrick; Fitzgerald, Eugene A.; Ya-Hong Xie; Monroe, Don // Journal of Applied Physics;1/1/1994, Vol. 75 Issue 1, p263 

    Relaxed Si0.7Ge0.3 epitaxial layers that possess threading defect densities as low as 5×105 cm-2 have been grown on Si substrates by rapid thermal chemical vapor deposition. The layers were formed in a series of steps of constant Ge content, each step with either 6% or 3% more Ge than the...

  • New type of solid phase epitaxy of alloy semiconductors by electron beam irradiation. Wada, Takao; Maeda, Yoshinobu // Applied Physics Letters;1/4/88, Vol. 52 Issue 1, p60 

    Solid phase epitaxial layers of AlxGa1-xSb (x[bar_over_tilde:_approx._equal_to]0.26–0.28) were grown by using an electron beam doping method on a (100)GaSb substrate at 50 °C. Surfaces of Al layers deposited by vacuum evaporation on GaSb wafers were irradiated with a fluence of...

  • Microcathodoluminescence and electron beam induced current observation of dislocations in freestanding thick n-GaN sample grown by hydride vapor phase epitaxy. Polyakov, A. Y.; Govorkov, A. V.; Smirnov, N. B.; Fang, Z-Q.; Look, D. C.; Park, S. S.; Han, J. H. // Journal of Applied Physics;11/1/2002, Vol. 92 Issue 9, p5238 

    Microcathodolumunescence (MCL) spectra measurements, MCL and electron beam induced current (EBIC) imaging of the freestanding n-GaN samples grown by hydride vapor phase epitaxy were made. Dark-spot defects in plan-view EBIC and MCL images and dark line defects in MCL images taken on the cleaved...

  • Effect of an electron beam on CaF2 and BaF2 epitaxial layers on Si. Suprun, S. P.; Shcheglov, D. V. // JETP Letters;Nov2008, Vol. 88 Issue 6, p365 

    Atomically smooth CaF2 and BaF2 layers have been sequentially grown on Si(111) substrates by molecular beam epitaxy. Pore macrodefects have been revealed at the points of the action of an electron beam from a diffractometer when analyzing the crystal structure of the surface during the growth...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics