Si-Si pair diffusion and correlation in AlxGa1-xAs and GaAs

Gavrilovic, P.; Gavrilovic, J.; Meehan, K.; Kaliski, R. W.; Guido, L. J.; Holonyak, N.; Hess, K.; Burnham, R. D.
October 1985
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p710
Academic Journal
The Si impurity is diffused into GaAs at temperatures in the range 725≤T≤850 °C. Secondary ion mass spectrometry (SIMS) analysis is used to obtain the Si atom density in the Si-diffused layers. On the basis of the SIMS data and the observation of a distinct exciton peak in absorption for samples diffused at temperatures <=775 °C, we argue that in the range nSi<=4×1018/cm3 the Si impurity diffused into GaAs is correlated and is incorporated as Si-Si nearest-neighbor pairs.


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