Theoretical model for the oxidation of silicon

Samalam, Vijay K.
October 1985
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p736
Academic Journal
A theoretical model for the rapid growth of silicon dioxide in a dry oxygen ambient is presented. The model is based on the fact that silicon dioxide has micropores through which the oxygen molecules can travel easily. The theory is compared to experiment and shows good agreement.


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