Hole-mediated chemisorption of atomic hydrogen in silicon

Pankove, J. I.; Magee, C. W.; Wance, R. O.
October 1985
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p748
Academic Journal
It has been shown that at 120 °C atomic hydrogen diffuses into p-type silicon where it ties to a Si dangling bond near an acceptor. However, a thin n-type surface layer blocks the entry of atomic hydrogen. This demonstrates that free holes in the surface layer are needed to permit the entry of atomic hydrogen.


Related Articles

  • The dynamics of dissociative chemisorption of H2 on a Si(111) surface. Rice, Betsy M.; NoorBatcha, I.; Thompson, Donald L.; Raff, Lionel M. // Journal of Chemical Physics;2/1/1987, Vol. 86 Issue 3, p1608 

    The dissociative chemisorption and scattering of H2 on an unreconstructed Si(111) surface has been investigated using classical trajectories on a potential-energy surface previously used to study H2 recombination/desorption from Si(111) [J. Chem. Phys. 85, 3081 (1986)]. The results show H2...

  • Atomic H abstraction of surface H on Si: An Eley–Rideal mechanism? Koleske, D. D.; Gates, S. M.; Jackson, B. // Journal of Chemical Physics;8/15/1994, Vol. 101 Issue 4, p3301 

    The abstraction kinetics for atomic hydrogen (Hat) removal of chemisorbed D and atomic deuterium (Dat) removal of chemisorbed H are studied on single crystal Si surfaces. The surface H and D coverages are measured in real time by mass analyzing the recoiled H+ and D+ ion signals. On both Si(100)...

  • Angular distribution of HD produced in the abstraction reaction by incident D atoms on the... Takamine, Y.; Namiki, A. // Journal of Chemical Physics;6/1/1997, Vol. 106 Issue 21, p8935 

    Studies the angular distribution of chemisorbed hydrogen on the silicon surface by atomic deuterium. Direct observation of the reaction products HD; Angular distribution of the HD yield to shift towards the specular direction of the incident D atoms.

  • Computational studies of heterogeneous reactions of SiH2 on reconstructed Si(111)–(7×7) and Si(111)–(1×1) surfaces. Agrawal, Paras M.; Thompson, Donald L.; Raff, Lionel M. // Journal of Chemical Physics;10/15/1989, Vol. 91 Issue 8, p5021 

    The dynamics of chemisorption and decomposition of SiH2 on Si(111)–(1×1) and recontructed Si(111)–(7×7) surfaces have been investigated using classical trajectories on a previously described [Surf. Sci. 195, 283 (1988)] potential-energy surface modified to yield the...

  • Disilane chemisorption on SixGe1-x(100)-(2×1): Molecular mechanisms and implications for film growth rates. Ng, Rachel Qiao-Ming; Tok, E. S.; Kang, H. Chuan // Journal of Chemical Physics;7/28/2009, Vol. 131 Issue 4, p044707 

    At low temperatures, hydrogen desorption is known to be the rate-limiting process in silicon germanium film growth via chemical vapor deposition. Since surface germanium lowers the hydrogen desorption barrier, SixGe(1-x) film growth rate increases with the surface germanium fraction. At high...

  • Direct subsurface absorption of hydrogen on Pd(111). Lo\vvik, Ole Martin; Olsen, Roar Aspesæter // Journal of Chemical Physics;3/15/1996, Vol. 104 Issue 11, p4330 

    We summarize and discuss some of the available experimental and theoretical data important for understanding the role played by subsurface sites in dissociative chemisorption calculations for the H2/Pd(111) system. Then we use a semi-empirical potential energy surface (PES) to model the...

  • Erratum: 'Chemisorption of hydrogen on Fe clusters through hybrid bonding mechanisms' [Appl. Phys. Lett. 102, 113108 (2013)]. Takahashi, Keisuke; Isobe, Shigehito; Ohnuki, Somei // Applied Physics Letters;4/15/2013, Vol. 102 Issue 15, p159902 

    A correction to the article "Chemisorption of hydrogen on Fe clusters through hybrid bonding mechanisms" that was published on April 19, 2013 issue is presented.

  • Trapping-mediated chemisorption of disilane on Si(100)-2x1. Ferguson, B. A.; Reeves, C. T.; Safarik, D. J.; Mullins, C. B. // Journal of Chemical Physics;8/8/2000, Vol. 113 Issue 6, p2470 

    Disilane adsorption probabilities have been measured on Si(100)-2×1 over a wide range of incident kinetic energies, incident angles, and surface temperatures using supersonic molecular beam techniques. The trapping-mediated chemisorption mechanism is shown to be the dominant adsorption...

  • Chemical structure of dihydride phase on saturated H-chemisorbed Si surfaces. Watanabe, Satoru // Journal of Chemical Physics;8/8/2000, Vol. 113 Issue 6, p2423 

    By observing infrared absorption features including dynamic polarizations due to Si-H stretching vibrations, chemical structures were determined on H-chemisorbed single-crystal Si surfaces that were formed in solution. A technique using polarized infrared multiple internal reflections was...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics