TITLE

Hole-mediated chemisorption of atomic hydrogen in silicon

AUTHOR(S)
Pankove, J. I.; Magee, C. W.; Wance, R. O.
PUB. DATE
October 1985
SOURCE
Applied Physics Letters;10/1/1985, Vol. 47 Issue 7, p748
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
It has been shown that at 120 °C atomic hydrogen diffuses into p-type silicon where it ties to a Si dangling bond near an acceptor. However, a thin n-type surface layer blocks the entry of atomic hydrogen. This demonstrates that free holes in the surface layer are needed to permit the entry of atomic hydrogen.
ACCESSION #
9818194

 

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