Light-induced defects in hydrogenated amorphous silicon observed by picosecond photoinduced absorption

Strait, J.; Tauc, J.
September 1985
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p589
Academic Journal
Phosphorus-doped and boron-doped hydrogenated amorphous silicon were studied by photoinduced absorption (PA) in the time range from 2 to 1800 ps. Prolonged light exposure (hω=2.0 eV) causes PA to decay more rapidly. The data are fit to a multiple trapping model. Minority carriers get trapped at deep defect states whose density increases with light exposure. These results are consistent with the interpretation that the light-induced defects in amorphous silicon are dangling bonds.


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