GaAs field-effect transistor properties, as influenced by the local concentrations of midgap native donors and dislocations

Dobrilla, P.; Blakemore, J. S.; McCamant, A. J.; Gleason, K. R.; Koyama, R. Y.
September 1985
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p602
Academic Journal
Results are presented of electrical parameter mapping for arrays of field-effect transistors (FET’s) fabricated in semi-insulating GaAs wafers, compared with mapping data of the dislocation density and the neutral concentration of the main midgap donor defect (known as EL2) in the same wafers. The work seeks to clarify whether a ‘‘shift’’ of FET parameters such as threshold voltage Vth results directly from dislocation proximity, or whether such a shift results from FET sensitivity to the local EL2 concentration. For a wafer having quite different spatial distributions of EL2 and dislocations, the FET parameters were found to correlate strongly with the local neutral EL2 density, a high density promoting a larger channel current and a more negative Vth. Such results suggest that a reported sensitivity of Vth to dislocation proximity may arise from the role a dislocation can play as a source or sink for point defects.


Related Articles

  • Analysis of planar channeling effects on the threshold voltage uniformity of GaAs metal-semiconductor field-effect transistors using stereographic projection. Mikami, Hitoshi; Uchitomi, Naotaka; Toyoda, Nobuyuki // Journal of Applied Physics;7/15/1988, Vol. 64 Issue 2, p610 

    Presents a study which investigated planar channeling effects on the threshold uniformity of gallium arsenide metal-semiconductor field-effect transistors within gallium arsenide wafers using stereographic projection method. Characteristics of gallium arsenide integrated circuits; Relationship...

  • Ultrathin body GaSb-on-insulator p-channel metal-oxide-semiconductor field-effect transistors on Si fabricated by direct wafer bonding. Masafumi Yokoyama; Haruki Yokoyama; Mitsuru Takenaka; Shinichi Takagi // Applied Physics Letters;2/16/2015, Vol. 106 Issue 8, p1 

    We have realized ultrathin body GaSb-on-insulator (GaSb-OI) on Si wafers by direct wafer bonding technology using atomic-layer deposition (ALD) Al2O3 and have demonstrated GaSb-OI p-channel metal-oxide-semiconductor field-effect transistors (p-MOSFETs) on Si. A 23-nm-thick GaSb-OI p-MOSFET...

  • Recalling Early GaAs MMIC Developments. Pengelly, Ray // Microwaves & RF;Mar2009, Vol. 48 Issue 3, p68 

    The article offers information on Gallium arsenide (GaAs) which is considered an excellent material for fabricating field-effect transistors and Schottky diodes for low-loss dielectric material. GaAs has a semi-insulating form that become basic material for radio frequency and microwave...

  • Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors. Urabe, Yuji; Yokoyama, Masafumi; Takagi, Hideki; Yasuda, Tetsuji; Miyata, Noriyuki; Yamada, Hisashi; Fukuhara, Noboru; Hata, Masahiko; Takenaka, Mitsuru; Takagi, Shinichi // Applied Physics Letters;12/20/2010, Vol. 97 Issue 25, p253502 

    We report on In0.53Ga0.47As(100)-on-insulator metal-insulator-semiconductor field-effect transistors (InGaAs-OI MISFETs) on Si wafers with standard front-gate configuration. The channel mobility of the InGaAs-OI MISFETs was higher than those for InGaAs MISFETs on bulk InP wafers. The on/off...

  • The effect of annealing treatments on defect structure and diffusion lengths in bulk n-type GaAs. Wong, D.; Kim, H. K.; Fang, Z. Q.; Schlesinger, T. E.; Milnes, A. G. // Journal of Applied Physics;9/1/1989, Vol. 66 Issue 5, p2002 

    Analyzes the effect of annealing treatments on defect structure and diffusion lengths in bulk n-type gallium arsenide (GaAs). Evaluation of the n-type GaAs wafers at different levels of temperature; Characterization of the wafers using deep-level transient spectroscopy; Implications of the...

  • Raman scattering from oval defects in GaAs epilayers. Khulbe, P.K.; Dobal, P.S.; Bist, H.D.; Mehta, S.K.; Muralidharan, R.; Jain, R.K. // Applied Physics Letters;7/26/1993, Vol. 63 Issue 4, p488 

    Investigates the oval defects in epitaxially grown {100} gallium arsenide wafers using micro-Raman spectroscopy technique. Modification in crystalline orientation within the defect structure; Quality of the defects; Deviation in oval defect stoichiometry.

  • Characterization of EL2 distribution on semi-insulating GaAs wafer by optically assisted imperfection profile. Wang, Faa-Ching // Journal of Applied Physics;6/1/1986, Vol. 59 Issue 11, p3737 

    Presents a nondestructive characterization technique which allows the determination of the relative density distribution of the deep levels responsible for compensation in high-resistivity semiconductor wafers at room temperature. Description of an optically assisted resistance profile;...

  • Uniformity of 3-in., semi-insulating, vertical-gradient-freeze GaAs wafers. Look, D. C.; Walters, D. C.; Mier, M. G.; Sewell, J. S.; Sizelove, J. S.; Akselrad, A.; Clemans, J. E. // Journal of Applied Physics;7/15/1989, Vol. 66 Issue 2, p1000 

    Evaluates the uniformity in [EL2], dislocation density, resistivity, mobility and carrier concentration for semi-insulating gallium arsenide wafers grown by the vertical-gradient-freeze technique. Description of the wafers used in the study; Method used to measure EL2 patterns.

  • On-wafer correlation between total EL2 concentration, shallow acceptor concentration, and Hall properties in semi-insulating GaAs. Brierley, Steven K.; Hendriks, Henry T. // Journal of Applied Physics;5/15/1990, Vol. 67 Issue 10, p6306 

    Determines the correlations between the total EL2 concentration, the net acceptor concentration and the Hall characteristics across a semi-insulating gallium arsenide wafer. Solution to the ambiguity in the interpretation of fluctuations in the measured EL2 concentration; Details of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics