Identification of a vanadium-related level in liquid encapsulated Czochralski-grown GaAs

Brandt, C. D.; Hennel, A. M.; Pawlowicz, L. M.; Dabkowski, F. P.; Lagowski, J.; Gatos, H. C.
September 1985
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p607
Academic Journal
We present the first positive identification of a vanadium-related electron trap in V-doped GaAs crystals grown by the liquid encapsulated Czochralski technique in pyrolytic boron nitride crucibles. Detailed deep level transient spectroscopy and capacitance transient analysis yielded a trap energy of 0.15±0.01 eV below the conduction band and an electron capture cross section of about 2×10-14 cm2. Optical absorption and mobility data show that this level corresponds to the ionized acceptor state V2+(3d3) of substitutional vanadium. No midgap levels other than EL2 could be detected in these V-doped crystals showing that doping with vanadium plays no direct role in the compensation process in semi-insulating GaAs crystals.


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