Field-dependent transport of electrons in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction systems

Inoue, Kaoru; Sakaki, Hiroyuki; Yoshino, Junji
September 1985
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p614
Academic Journal
The transport properties of high-mobility electrons in selectively doped AlGaAs/GaAs/AlGaAs double-heterojunction systems have been investigated for electric fields (E) up to several kV/cm by pulsed Hall and pulsed current-voltage measurements. It was found that electron mobilities began to decrease drastically in proportion to E-0.8 when the electric fields exceeded (6.2–6.6)×106 (cm/s)/μ0, where μ0 is the low field electron mobility. The saturation of electron velocity was observed at E≥ 2 kV/cm, and its estimated value of (1.5–1.7)×107 cm/s was found to be almost independent both of the temperature in the range below 100 K and the density of electrons in the GaAs well of 3.8×1011 and 1.2×1012/cm2.


Related Articles

  • Formation of electron internal transport barrier and achievement of high ion temperature in Large Helical Device. Takeiri, Y.; Shimozuma, T.; Kubo, S.; Morita, S.; Osakabe, M.; Kaneko, O.; Tsumori, K.; Oka, Y.; Ikeda, K.; Nagaoka, K.; Ohyabu, N.; Ida, K.; Yokoyama, M.; Miyazawa, J.; Goto, M.; Narihara, K.; Yamada, I.; Idei, H.; Yoshimura, Y. // Physics of Plasmas;May2003, Vol. 10 Issue 5, p1788 

    An internal transport barrier (ITB) was observed in the electron temperature profile in the Large Helical Device [O. Motojima et al., Phys. Plasmas 6, 1843 (1999)] with a centrally focused intense electron cyclotron resonance microwave heating. Inside the ITB the core electron transport was...

  • On the tunnel electron transport in metal/Langmuir–Blodgett film/metal systems. Barraud, André; Millie, Philippe; Yakimenko, Irina // Journal of Chemical Physics;10/22/1996, Vol. 105 Issue 16, p6972 

    This paper presents a new method for the calculation of the tunnel current through a metal/multilayer of conjugated molecules/metal sandwich structure under low and moderate electric fields. The electron transfer from one electrode to the other through the cascaded molecules is treated step by...

  • Grain boundary effects on carrier transport in undoped polycrystalline chemical-vapor-deposited.... Han, S.; Wagner, R.S. // Applied Physics Letters;5/20/1996, Vol. 68 Issue 21, p3016 

    Examines the grain-boundary effects on the carrier transport properties in polycrystalline chemical-vapor-deposited diamond. Use of hard X-ray excitation source; Variation of applied electric field intensity; Degradation in the carrier transport properties.

  • Hole-assisted Zener magnetotunneling in heterostructures. Cinelli, Riccardo A. G.; Piazza, Vincenzo; De Franceschi, Silvano; Lazzarino, Marco; Beltram, Fabio; Sivco, Deborah L.; Cho, Alfred Y. // Applied Physics Letters;12/14/1998, Vol. 73 Issue 24 

    Electron transport at high electric fields is investigated in a periodic semiconductor heterostructure. We present the analysis of the magnetic-field dependence of resonant Zener tunneling from a valence-band subband to a conduction-band subband in a multiple-quantum-well heterostructure. It is...

  • Time-of-flight measurement of electron velocity in an In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructure. Shigekawa, Naoteru; Furuta, Tomofumi; Arai, Kunihiro // Applied Physics Letters;7/2/1990, Vol. 57 Issue 1, p67 

    The electron velocity versus electric field (v-E) relationship was measured between 0 and 12 kV/cm at room temperature for a selectively Be-doped In0.52Al0.48As/In0.53Ga0.47As /In0.52Al0.48As double heterostructure. It was found that the observed electron velocity is greater than that previously...

  • Photorefractive effects in long, narrow BSO crystals with applied electric field. Cedilnik, G.; Esselbach, M.; Kiessling, A.; Kowarschik, R.; Nippolainen, E.; Kamshilin, A.A.; Prokofiev, V.V. // Applied Physics B: Lasers & Optics;1999, Vol. 68 Issue 5, p983 

    Abstract. In a photorefractive Bi[sub 12] SiO[sub 20] crystal with high applied electric ac field of square-wave shape a fast two-wave coupling response (less than 1 s) and a slow hologram readout decay (minutes) was found for a wavelength of 633 nm. This can be explained by electron--hole...

  • Electron transport in nanotube-ribbon hybrids. Li, T. S.; Chang, S. C.; Lin, M. F. // European Physical Journal B -- Condensed Matter;Aug2009, Vol. 70 Issue 4, p497 

    The electronic and transport properties of nanotube-ribbon hybrids subject to the influences of a transverse electric field are investigated theoretically. The energy dispersion relations are found to exhibit rich dependence on the nanotube-ribbon interactions, the field strength, and the...

  • Electron ratchet effect in semiconductor devices and artificial materials with broken centrosymmetry. Song, A.M. // Applied Physics A: Materials Science & Processing;2002, Vol. 75 Issue 2, p229 

    Studies on nonlinear electron transport in nanometer-sized semiconductor devices with broken centrosymmetry are reviewed. In these devices, an applied alternating (rocking) electric field induces a net flow of electrons in the direction perpendicular to that of the applied field. Such an...

  • High-Field Electron Transport Controlled by Optical Phonon Emission in Nitrides. Komirenko, S.M.; Kim, K.W.; Kochelap, V.A.; Stroscio, M.A. // International Journal of High Speed Electronics & Systems;Dec2002, Vol. 12 Issue 4, p1057 

    We have investigated the problem of electron runaway at strong electric fields in polar semiconductors focusing on the nanoscale nitride-based heterostructures. A transport model which takes into account the main features of electrons injected in short devices under high electric fields is...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics