Electrical uniformity for Si-implanted layer of completely dislocation-free and striation-free GaAs

Hyuga, Fumiaki; Kohda, Hiroki; Nakanishi, Hideo; Kobayashi, Takashi; Hoshikawa, Keigo
September 1985
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p620
Academic Journal
Electrical uniformity for Si-implanted layer of In-doped GaAs completely free from dislocations and striations is evaluated here using small Hall chips with 400-μm spacing. Sheet carrier concentration, which determines threshold voltages of field-effect transistors, is quite uniform across the wafer, and its standard deviation decreases to 1/5 of that for the conventional liquid-encapsulated Czochralski-grown GaAs. Hall mobility is not degraded despite a high concentration (5–10×1019 atoms cm-3) of indium. These results are promising for realizing substrates of high-performance GaAs large-scale integrated circuits.


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