TITLE

Lattice images of defect-free silicon on sapphire prepared by ion implantation

AUTHOR(S)
Parker, M. A.; Sinclair, R.; Sigmon, T. W.
PUB. DATE
September 1985
SOURCE
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p626
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report for the first time high resolution cross section transmission electron microscopy (HRXTEM) of defect-free silicon on sapphire (SOS) films. These films are prepared from as-grown SOS films by use of multiple ion implantation and annealing sequences. HRXTEM lattice images for both as-grown and processed films are obtained, and correlation with previous ion channeling experiments on this material is discussed.
ACCESSION #
9818145

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics