TITLE

Application of organometallic chemical vapor deposition mechanisms to lateral band-gap patterning on stepped surfaces

AUTHOR(S)
Colas, E.; Clausen, E. M.; Kapon, E.; Hwang, D. M.; Simhony, S.
PUB. DATE
December 1990
SOURCE
Applied Physics Letters;12/3/1990, Vol. 57 Issue 23, p2472
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the study of organometallic chemical vapor deposition (OMCVD) on the stepped surfaces obtained by crystal growth on nonplanar vicinal (100) GaAs substrates. Scanning and transmission electron microscopy investigations were combined to identify two distinct diffusion mechanisms in OMCVD: one mechanism involves the gas phase and allows us to selectively distribute the incoming flux of volatile reactants between two adjacent facets; the other one involves surface diffusion of nonvolatile species over distances in the hundred nm range. Spectrally and spatially resolved cathodoluminescence imaging of the light emissions from a single quantum well structure gives direct evidence that the quantum well thickness variations, which can be controlled over a wide range (up to 1:5) by growth parameters, produce effective band-gap variations.
ACCESSION #
9818144

 

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