TITLE

Anodic oxidation of tantalum silicide

AUTHOR(S)
Martínez-Duart, J. M.; Fernández, M.; Paule, E.; Climent, A.; Albella, J. M.; Perriere, J.; Siejka, J.
PUB. DATE
September 1985
SOURCE
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p579
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Oxide films on cosputtered tantalum silicide have been formed by anodic oxidation. The films were characterized by Rutherford backscattering and nuclear microanalysis measurements yielding a composition consisting in a mixture of Ta2O5 and SiO2. The films show good quality insulating properties as determined by capacitance, electrical conductivity, and dielectric strength measurements. The results of this work are compared with those obtained by the thermal oxidation of tantalum silicide.
ACCESSION #
9818128

 

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