Anodic oxidation of tantalum silicide

Martínez-Duart, J. M.; Fernández, M.; Paule, E.; Climent, A.; Albella, J. M.; Perriere, J.; Siejka, J.
September 1985
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p579
Academic Journal
Oxide films on cosputtered tantalum silicide have been formed by anodic oxidation. The films were characterized by Rutherford backscattering and nuclear microanalysis measurements yielding a composition consisting in a mixture of Ta2O5 and SiO2. The films show good quality insulating properties as determined by capacitance, electrical conductivity, and dielectric strength measurements. The results of this work are compared with those obtained by the thermal oxidation of tantalum silicide.


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