TITLE

Measurement of optical absorption in single quantum wells using photothermal deflection spectroscopy

AUTHOR(S)
Penna, A. F. S.; Shah, Jagdeep; DiGiovanni, A. E.; Cho, A. Y.; Gossard, A. C.
PUB. DATE
September 1985
SOURCE
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p591
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report the measurement of the optical absorption spectra of single quantum wells of GaAs (104 Ã… thick) and InGaAs (75 Ã… thick) by photothermal deflection spectroscopy. The room-temperature spectra show distinct structure due to heavy- and light-hole excitons in both GaAs and InGaAs samples. The measurements also show that absorption spectra in extremely thin (<10 Ã…) quantum wells, single heterostructures, or other microstructures with very small absorptance can be obtained by this technique.
ACCESSION #
9818126

 

Related Articles

  • Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness. Beernink, K. J.; York, P. K.; Coleman, J. J.; Waters, R. G.; Kim, J.; Wayman, C. M. // Applied Physics Letters;11/20/1989, Vol. 55 Issue 21, p2167 

    Data are presented on the efficiency, reliability, and temperature dependence of wavelength and threshold for strained-layer InxGa1-xAs-GaAs (x∼0.25, λ>1.06 μm) separate confinement heterostructure lasers for several thicknesses near the critical thickness. Devices with well...

  • Coherent, monolithic two-dimensional strained InGaAs/AlGaAs quantum well laser arrays using grating surface emission. Evans, G. A.; Bour, D. P.; Carlson, N. W.; Hammer, J. M.; Lurie, M.; Butler, J. K.; Palfrey, S. L.; Amantea, R.; Carr, L. A.; Hawrylo, F. Z.; James, E. A.; Kirk, J. B.; Liew, S. K.; Reichert, W. F. // Applied Physics Letters;12/25/1989, Vol. 55 Issue 26, p2721 

    Two-dimensional coherent strained-layer InGaAs/AlGaAs quantum well laser arrays consisting of 100 (10×10) active elements have been fabricated and characterized. The central lobe of the far field has a full width at half power of 0.04°×1°. Observation of about 2 W peak power from...

  • Strain-Compensated InGaAs/InGaAs Quantum Well Cell With 2 μm Band-Edge. Rohr, Carsten; Abbott, Paul; Ballard, Ian; Connolly, James P.; Barnham, Keith W. J.; Nasi, Lucia; Ferrari, Claudio; Lazzarini, Laura; Mazzer, Massimo; Roberts, John // AIP Conference Proceedings;2003, Vol. 653 Issue 1, p344 

    Strain-compensated Quantum Well Cells (QWCs) have been shown to extend the absorption to longer wavelengths than attainable with lattice-matched material, while retaining a similar or better dark current. This is of particular interest for thermophotovoltaic (TPV) applications with low...

  • Study of multiple InAs/GaAs quantum-well structures by electroreflectance spectroscopy. Bolshakov, A.; Chaldyshev, V.; Babichev, A.; Kudryashov, D.; Gudovskikh, A.; Morozov, I.; Sobolev, M.; Nikitina, E. // Semiconductors;Nov2015, Vol. 49 Issue 11, p1400 

    A periodic Bragg heterostructure with three ultrathin InAs/GaAs quantum wells in a period is fabricated and studied. The splitting energy of exciton transitions in quantum wells is determined by the electroreflectance- spectroscopy method and numerical quantum-mechanical calculation. The...

  • MULTI-COLOR, BROADBAND QUANTUM WELL INFRARED PHOTODETECTORS FOR MID-, LONG-, AND VERY LONG-WAVELENGTH INFRARED APPLICATIONS. Li, S.S. // International Journal of High Speed Electronics & Systems;Sep2002, Vol. 12 Issue 3, p761 

    Quantum well infrared photodetectors (QWIPs) have been widely investigated for the 3-5 µm mid-wavelength infrared (MWIR) and 8-12 µm long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: λ[sub c] > 14 µm) imaging array...

  • Single electron tunneling in double and triple quantum wells. Filikhin, I.; Karoui, A.; Vlahovic, B. // International Journal of Modern Physics B: Condensed Matter Phys;May2016, Vol. 30 Issue 13, p-1 

    Electron localization and tunneling in laterally distributed double quantum well (DQW) and triple quantum well (TQW) are studied. Triangular configuration for the TQWs as well as various quantum well (QW) shapes and asymmetry are considered. The effect of adding a third well to a DQW is...

  • Native-oxide-confined high-index-contrast λ=1.15 μm strain-compensated InGaAs single quantum well ridge waveguide lasers. Liang, D.; Hall, D. C.; Huang, J. Y.-T.; Tsvid, G.; Mawst, L. J. // Applied Physics Letters;10/20/2008, Vol. 93 Issue 16, p161108 

    High performance native-oxide-confined high-index-contrast (HIC) ridge waveguide (RWG) diode lasers are fabricated in a strain-compensated In0.4Ga0.6As single quantum well structure by employing a deep dry etch plus nonselective O2-enhanced wet thermal oxidation process. The thermal native oxide...

  • Molecular beam epitaxial growth and transmission electron microscopy studies of thin GaAs/InAs(100) multiple quantum well structures. Grunthaner, F. J.; Yen, M. Y.; Fernandez, R.; Lee, T. C.; Madhukar, A.; Lewis, B. F. // Applied Physics Letters;5/15/1985, Vol. 46 Issue 10, p983 

    We report successful molecular beam epitaxial growth of thin multiple quantum well structures of GaAs/InAs(100) involving 7.4% lattice mismatch. Cross-sectional transmission electron microscopy studies reveal well formed interfaces and low defect density.

  • Investigation of the critical layer thickness in elastically strained InGaAs/GaAlAs quantum wells by photoluminescence and transmission electron microscopy. Reithmaier, J.-P.; Cerva, H.; Lösch, R. // Applied Physics Letters;1/2/1989, Vol. 54 Issue 1, p48 

    We have studied strained InGaAs quantum wells with GaAlAs barriers, grown by molecular beam epitaxy, varying In content and well thickness. Photoluminescence measurements were made at 12 K. The appearance of a characteristic additional exciton-like photoluminescence peak indicates the transition...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics