TITLE

Capacitance-voltage characteristics of GaAs-AlAs heterostructures

AUTHOR(S)
Woodward, T. K.; Schlesinger, T. E.; McGill, T. C.; Burnham, R. D.
PUB. DATE
September 1985
SOURCE
Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p631
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on an experimental study of the temperature and photosensitive capacitance-voltage (C-V) characteristics of GaAs-AlAs-GaAs heterostructures grown by metalorganic chemical vapor deposition. The structures consisted of a layer of AlAs either 2500 or 4000 Ã… thick sandwiched between layers of GaAs which were a few microns thick. C-V curves were measured at 1 MHz, both with and without illumination. Measurements were made at 77 and 300 K. The C-V showed hysteresis near zero bias with the capacitance being larger when the voltage was swept from reverse to forward bias in the dark. The C-V displayed a light sensitive peak near zero bias. With illumination, the capacitance was greater, and no hysteresis was observed. We explain these phenomena as being due to deep levels near the AlAs-GaAs interface.
ACCESSION #
9818120

 

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