Elimination of dark line defects in lattice-mismatched epilayers through use of strained-layer superlattices

Gourley, P. L.; Biefeld, R. M.; Dawson, L. R.
September 1985
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p482
Academic Journal
The microscopic optical quality of thick (∼1 μm) III-V semiconductor epitaxial layers, mismatched to their substrates, is examined by photoluminescence microimaging. The layers include several kinds of strained-layer superlattices (GaP/GaAsxP1-x, GaAs/GaAs1-xPx, and GaAs/InxGa1-xAs) and associated alloys. Microscopic images of epilayer luminescence directly reveal the presence of misfit dislocations which appear as dark line defects. These defects can be completely eliminated in the strained-layer superlattices if these structures have thin layers, less than the critical thickness for elastic accommodation, and sufficient numbers of interfaces of block threading dislocations.


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