Calibration curve for infrared spectrophotometry of nitrogen in silicon

Itoh, Yoshiko; Nozaki, Tadashi; Masui, Tsumoru; Abe, Takao
September 1985
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p488
Academic Journal
A calibration curve for infrared absorptiometry of nitrogen in silicon at 963 cm-1 was obtained by the use of charged particle activation analysis with the 14N(p, α) 11C reaction. For as-grown floating zone (FZ) silicon, it is expressed as [nitrogen concentration at. cm-3)] =(1.83±0.24)×1017 (absorption coefficient). For heat-treated FZ silicon and Czochralski (CZ) silicon, this relation was found to give underestimated nitrogen concentration suggesting the existence of infrared insensitive nitrogen.


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