TITLE

Frequency limit of double-barrier resonant-tunneling oscillators

AUTHOR(S)
Luryi, Serge
PUB. DATE
September 1985
SOURCE
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p490
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The speed of operation of negative differential resistance (NDR) devices based on resonant tunneling in a double-barrier quantum-well structure is considered. It is shown that the intrinsic RC delay of a single barrier limits the frequency of active oscillations to fmax =1/(2πτ), where τ=εα-1(λ/c)exp(4πd/λ) with λ being the de Broglie wavelength of the tunneling electron, d the barrier thickness, ε the dielectric permittivity, c the speed of light, and α≊1/137 the fine-structure constant. The relevance of this estimate to recent experimental results is discussed. An alternative mechanism for the NDR is proposed—not involving resonant tunneling. It should be observable in various single-barrier structures in which tunneling occurs into a two-dimensional system of states. In a double-barrier structure, specially designed experiments are required to distinguish this effect from resonant tunneling.
ACCESSION #
9818096

 

Related Articles

  • Frequency limit of double barrier resonant tunneling oscillators. Coon, D. D.; Liu, H. C. // Applied Physics Letters;7/14/1986, Vol. 49 Issue 2, p94 

    The frequency limit of negative differential resistance (NDR) devices employing resonant tunneling in double barrier quantum well structures is analyzed. We show that the standard theoretical approach to resonant tunneling together with a unitarity bound leads to a lower bound on NDR which is in...

  • Oscillator strength of excitons in (In, Ga) As/GaAs quantum wells in the presence of a large... Monier, C.; Freundlich, A. // Journal of Applied Physics;3/1/1999, Vol. 85 Issue 5, p2713 

    Presents information on a study which calculated the oscillator strength of the fundamental heavy-hole exciton in strained quantum well InGaAs/GaAs p-i-n diode heterostructures using a variational approach combined with transfer matrix formalism. Theoretical approach; Results and discussion;...

  • Response to ‘‘Comment on ‘Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well’ ’’ [Appl. Phys. Lett. 50, 1610 (1987)]. Morkoç, H.; Chen, J.; Reddy, U. K.; Henderson, T.; Luryi, S. // Applied Physics Letters;6/1/1987, Vol. 50 Issue 22, p1611 

    Responds to comments on the article 'Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well,' published in the December 1986 issue of 'Applied Physics Letters.' Possibility of resonance enhancement of tunneling current in the device...

  • Comment on ‘‘Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well’’ [Appl. Phys. Lett. 49, 70 (1986)]. Wolak, E.; Harwit, Alex; Harris, J. S. // Applied Physics Letters;6/1/1987, Vol. 50 Issue 22, p1610 

    Comments on the article 'Observation of a negative differential resistance due to tunneling through a single barrier into a quantum well,' published in the December 1986 issue of 'Applied Physics Letters.' Current-voltage characteristics of the structure; Control sample annealed so that the...

  • An intuitive method for oscillator analysis using Miller's theorems. Moura, Luis // International Journal of Electrical Engineering Education;Jan2002, Vol. 39 Issue 1, p31 

    In this paper we discuss an intuitive method for the calculation of the oscillation frequency and the calculation of the conditions for sustained oscillation of analogue oscillators using the concept of negative resistance combined with Miller's theorems.

  • Quantum well surface-plasmon oscillator. Palmer, A. Jay // Applied Physics Letters;3/2/1987, Vol. 50 Issue 9, p537 

    We identify a new type of electromagnetic oscillator which utilizes the negative differential conductivity of a quantum well tunnel junction to drive surface-plasmon oscillations on the outside boundaries of the junction. We calculate the complex propagation constant as a function of frequency...

  • Saturable absorbing dynamics of GaInN multiquantum well structures. Miyajima, Takao; Kono, Shunsuke; Watanabe, Hideki; Oki, Tomoyuki; Koda, Rintaro; Kuramoto, Masaru; Ikeda, Masao; Yokoyama, Hiroyuki // Applied Physics Letters;4/25/2011, Vol. 98 Issue 17, p171904 

    We evaluated saturation energies and absorption recovery time dependent on reverse-bias voltage for a waveguide-coupled GaInN multiquantum well saturable absorber in a bisectional laser structure. When the applied reverse-bias was increased from 5 to 20 V, the saturation energy at 405 nm...

  • Blue and green electroluminescence from CdSe nanocrystal quantum-dot-quantum-wells. Lu, Y. F.; Cao, X. A. // Applied Physics Letters;11/17/2014, Vol. 105 Issue 20, p1 

    CdS/CdSe/ZnS quantum dot quantum well (QDQW) nanocrystals were synthesized using the successive ion layer adsorption and reaction technique, and their optical properties were tuned by bandgap and strain engineering. 3-monolayer (ML) CdSe QWs emitted blue photoluminescence at 467 nm with a...

  • Effect of Roughness of Two-Dimensional Heterostructures on Weak Localization. Germanenko, A. V.; Min'kov, G. M.; Rut, O. É.; Larionova, V. A.; Zvonkov, B. N.; Shashkin, V. I.; Khrykin, O. I.; Filatov, D. O. // Physics of the Solid State;Jan2005, Vol. 47 Issue 1, p133 

    The effect that a longitudinal magnetic field exerts on the transverse negative magnetoresistance by suppressing the interference quantum correction is studied in GaAs/InxGa1 – xAs/GaAs structures with a single quantum well. It is shown that the variation in the shape of the transverse...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics