High-quality Si-implanted GaAs activated by a two-step rapid thermal annealing technique

Seo, Kwang S.; Dhar, Sunanda; Bhattacharya, Pallab K.
September 1985
Applied Physics Letters;9/1/1985, Vol. 47 Issue 5, p500
Academic Journal
The properties of Si-implanted GaAs activated by halogen lamp annealing have been studied. It is found that consistently better results can be obtained by a two-step annealing technique in which the high-temperature main anneal step is followed by a second anneal at a lower temperature. Mobilities and activations of 4000–4600 cm2/Vs and 50–65%, respectively, are obtained for (3.0–6.5)×1012 cm-2/100 keV 29Si+ implants. These values are among the best reported for lamp-annealed GaAs. Raman spectra confirm the high quality of the annealed crystals.


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